Process and device modeling for microelectronics

Part 1 Process modeling: a new electron scattering model for X-ray lithography applications, G. Messina et al Monte Carlo and molecular dynamics simulation applied to ion implementation, A.M. Mazzone. Part 2 Device modeling: 3-D simulation of silicon devices - physical models and numerical algorithms, P. Ciampolini et al a generalized approach to the hydrodynamic model of semiconductor equations, M. Rudan et al Monte Carlo simulation of silicon devices, A. Abramo et al analytical modeling of the MOS transistor for the electrical silumation of integrated circuits, C.Turchedtti et al. Part 3 Model characterization and applications: impact-ionization effects in advanced Si bipolar transistors, G. Verzellesi et al experimental analysis of temperature dependences of the S.H.R. lifetime in n-type silicon, S. Bellone and P. Spirito the numerical simulation of floating gate non-volatile memory devices, S. Keeney et al development of a CCD/CMOS VLSI technology especially tailored for smart optical sensors, G. Soncini et al TCAD and empirical model building for process optimization and yield enhancement, M. Lissoni and C. Lombardi.