Integration of trench isolation technolgy and plasma release for advanced MEMS design on standard silicon wafers

A new technology for the fabrication of high-aspect-ratio singel crystal silicon MEMS on standard silicon wafers is presented. A two-mask fabrication process combines vertical trench isolation with plasma release to allow formation of distinct electrical domains on movable structures in additional delicate isolation between dry released, mono crystalline, of the starting material and a large freedom of design makes fabrication and prototyping. Several example microstructures have been successfully fabricated using this technology.