EBIC investigations of dislocations in ELOG GaN

Dislocations in the ELOG n-GaN films have been studied by the Electron Beam Induced Current (EBIC) method. The effect of dopant concentration and diffusion length values on the dislocation EBIC profile is revealed. It is shown that the width of dislocation image in the EBIC mode decreases with a diffusion length decrease and the dopant concentration increase. In the crystals with the submicron diffusion length the individual dislocations can be separated in the EBIC images up to the dislocation densities higher that 109cm-2. The radius of dislocation related defect cylinder was found to increase with the dopant concentration decreasing that could be explained under an assumption that dislocations in GaN are charged. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)