Modeling effects of abrasive particle size and concentration on material removal at molecular scale in chemical mechanical polishing

Abstract A novel material removal model as a function of abrasive particle size and concentration was established in chemical mechanical polishing (CMP) based on molecular scale mechanism, micro-contact mechanics and probability statistics. A close-form equation was firstly developed to calculate the number of effective particles. It found nonlinear dependences of removal rate on the particle size and concentration, being qualitatively agreement with the published experimental data. The nonlinear relation results from the couple relationship among abrasive number, slurry concentration and surface atoms’ binding energy with the particle size. Finally, the system parameters such as the operational conditions and materials properties were incorporated into the model as well.

[1]  Seong H. Kim,et al.  A mathematical model for chemical–mechanical polishing based on formation and removal of weakly bonded molecular species , 2003 .

[2]  Yongjin Guo,et al.  A Scratch Intersection Model of Material Removal During Chemical Mechanical Planarization (CMP) , 2005 .

[3]  Yongguang Wang,et al.  Modeling the effects of cohesive energy for single particle on the material removal in chemical mechanical polishing at atomic scale , 2007 .

[4]  Uday Mahajan,et al.  Effect of Particle Size during Tungsten Chemical Mechanical Polishing , 1999 .

[5]  David Dornfeld,et al.  Material removal mechanism in chemical mechanical polishing: theory and modeling , 2001 .

[6]  David Dornfeld,et al.  Material removal regions in chemical mechanical planarization for submicron integrated circuit fabrication: coupling effects of slurry chemicals, abrasive size distribution,and wafer-pad contact area , 2003 .

[7]  Zhong Lin Wang,et al.  Converting Ceria Polyhedral Nanoparticles into Single-Crystal Nanospheres , 2006, Science.

[8]  Wonseop Choi,et al.  Roles of Colloidal Silicon Dioxide Particles in Chemical Mechanical Polishing of Dielectric Silicon Dioxide , 2005 .

[9]  J. I. McCool,et al.  Predicting Microfracture in Ceramics Via a Microcontact Model , 1986 .

[10]  D. Tamboli,et al.  Novel Interpretations of CMP Removal Rate Dependencies on Slurry Particle Size and Concentration , 2004 .

[11]  Arun K. Sikder,et al.  Chemical mechanical planarization for microelectronics applications , 2004 .

[12]  L. Chang On the CMP material removal at the molecular scale , 2007 .

[13]  Yongwu Zhao,et al.  A micro-contact and wear model for chemical-mechanical polishing of silicon wafers , 2002 .

[14]  Yongwu Zhao,et al.  Modeling the effects of abrasive size, surface oxidizer concentration and binding energy on chemical mechanical polishing at molecular scale , 2008 .

[15]  Y. Jeng,et al.  Impact of Abrasive Particles on the Material Removal Rate in CMP A Microcontact Perspective , 2004 .

[16]  Wei Cai,et al.  A fundamental model proposed for material removal in chemical-mechanical polishing , 2010 .

[17]  G. Ahmadi,et al.  Modeling the Effects of Abrasive Size Distribution, Adhesion, and Surface Plastic Deformation on Chemical-Mechanical Polishing , 2005 .

[18]  Thomas George,et al.  A Nanochannel Fabrication Technique without Nanolithography , 2003 .

[19]  Yongguang Wang,et al.  Modeling effect of chemical–mechanical synergy on material removal at molecular scale in chemical mechanical polishing , 2008 .

[20]  Effects of Particle Concentration on Chemical Mechanical Planarization , 2002 .

[21]  Gupta,et al.  Analysis of Contact Interactions between a Rough Deformable Colloid and a Smooth Substrate. , 2000, Journal of colloid and interface science.