论文信息 - Effect of Laser Plasma X-ray Irradiation on Nucleation in Amorphous Silicon Film

Effect of Laser Plasma X-ray Irradiation on Nucleation in Amorphous Silicon Film

The effects of laser plasma X-ray (LPX) irradiation on amorphous silicon (a-Si) film structure and the density of states around the edge of the valence and conduction bands were investigated for low-temperature crystallization. An LPX with a photon energy of 115 eV was generated by a Nd:YAG excitation laser using solid Xe. The Raman spectra of a-Si films were not changed by LPX irradiation. However, the optical transmittance of a-Si film was increased by LPX irradiation at approximately 570 nm. This phenomenon relates to the movement of Si atoms to the quasi-nuclei phase in a-Si film.

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