Improved quality GaN grown by molecular beam epitaxy using In as a surfactant

The surfactant effect of In during the growth of GaN by molecular beam epitaxy has been investigated. It has been found that the presence of In modifies the diffusion kinetics in the growing GaN surface, leading to the observation of persistent reflection high energy electron diffraction intensity oscillations, characteristic of layer-by-layer growth. Electron microscopy studies revealed drastic modifications of the GaN structural properties associated with the presence of In during the growth. When grown in the presence of In, GaN exhibits an intense band edge luminescence, free of the component at 3.41 eV which is characteristic of defects associated with growth in N-rich conditions.

[1]  P. Hacke,et al.  Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal‐phase GaN by molecular beam epitaxy , 1996 .

[2]  C. T. Foxon,et al.  Evidence for Shallow Acceptor Levels in MBE Grown GaN , 1996 .

[3]  B. Chung,et al.  The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy , 1992 .

[4]  Eugene E. Haller,et al.  Fine Structure of the 3.42 eV Emission Band in GaN , 1995 .

[5]  Shuji Nakamura,et al.  Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm , 1997 .

[6]  F. Widmann,et al.  Layer-by-layer growth of AlN and GaN by molecular beam epitaxy , 1997 .

[7]  S. Cho,et al.  Photoluminescence of Undoped GaN Grown on c-Plane Al2O3 by Electron Cyclotron Resonance Molecular Beam Epitaxy , 1995 .

[8]  Gerald B. Stringfellow,et al.  Solid phase immiscibility in GaInN , 1996 .

[9]  M. Scheffler,et al.  Adatom diffusion at GaN (0001) and (0001̄) surfaces , 1998, cond-mat/9809006.

[10]  T. Moustakas,et al.  Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire , 1997 .

[11]  Theodore D. Moustakas,et al.  Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition , 1997 .

[12]  Peter Hacke,et al.  Arsenic mediated reconstructions on cubic (001) GaN , 1997 .

[13]  Y. Okada,et al.  Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam Epitaxy , 1995 .

[14]  S. Denbaars,et al.  Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy , 1997 .

[15]  M. Arlery,et al.  POLARITY DETERMINATION OF GAN FILMS BY ION CHANNELING AND CONVERGENT BEAM ELECTRON DIFFRACTION , 1996 .