Recent Develop lnteg rat io

Issues associatccd with the integration of transceiver components on to a single silicon substrate are discussed. In particular, recently proposed receiver and transmitter architectures for high integration are examined on the promise of providing multistandard capability. In additifon, existing barriers to lower power transceiver operation are examined as well as some proposed directions for future integrated transceiver research and development.

[1]  Donald K. Weaver,et al.  A Third Method of Generation and Detection of Single-Sideband Signals , 1956, Proceedings of the IRE.

[2]  S. Okwit,et al.  ON SOLID-STATE CIRCUITS. , 1963 .

[3]  菅野 卓雄 1972 International Solid-State Circuits Conference に出席して , 1972 .

[4]  D. M. Haines,et al.  Direct conversion linear transceiver design , 1989 .

[5]  J. H. Havens,et al.  A 2.7 V to 4.5 V single-chip GSM transceiver RF integrated circuit , 1995 .

[6]  Robert G. Meyer,et al.  Future directions in silicon ICs for RF personal communications , 1995, Proceedings of the IEEE 1995 Custom Integrated Circuits Conference.

[7]  Michiel Steyaert,et al.  A single-chip 900 MHz CMOS receiver front-end with a high performance low-IF topology , 1995, IEEE J. Solid State Circuits.

[8]  D. Edelstein,et al.  Monolithic spiral inductors fabricated using a VLSI Cu-damascene interconnect technology and low-loss substrates , 1996, International Electron Devices Meeting. Technical Digest.

[9]  B. Razavi,et al.  A 2-GHz 1.6-mW phase-locked loop , 1996, 1996 Symposium on VLSI Circuits. Digest of Technical Papers.

[10]  C. Nguyen High-Q micromechanical oscillators and filters for communications , 1997, Proceedings of 1997 IEEE International Symposium on Circuits and Systems. Circuits and Systems in the Information Age ISCAS '97.

[11]  G. Chien,et al.  A 1.9 GHz wide-band IF double conversion CMOS integrated receiver for cordless telephone applications , 1997, 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers.

[12]  A. Rofougaran,et al.  The future of CMOS wireless transceivers , 1997, 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers.

[13]  T. Endo,et al.  A 2.7 V GSM RF transceiver IC , 1997, 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers.

[14]  P. Baltus,et al.  An ultra low-power RF bipolar technology on glass , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[15]  H. Samavati,et al.  A 115 mW CMOS GPS receiver , 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156).

[16]  P.R. Gray,et al.  A 1.9GHz 1W CMOS class E power amplifier for wireless communications , 1999, Proceedings of the 24th European Solid-State Circuits Conference.

[17]  Michiel Steyaert,et al.  A 1.5 V, wide band 3 GHz, CMOS quadrature direct up-converter for multi-mode wireless communications , 1998, Proceedings of the IEEE 1998 Custom Integrated Circuits Conference (Cat. No.98CH36143).

[18]  W. McFarland,et al.  An IC for linearizing RF power amplifiers using envelope elimination and restoration , 1998, 1998 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, ISSCC. First Edition (Cat. No.98CH36156).

[19]  B. Boser,et al.  A Low-Noise RF Voltage-Controlled Oscillator Using On-Chip High-Q Three-Dimensional Coil Inductor and Micromachined Variable Capacitor , 1998 .