IGBT 모듈의 냉각성능 향상을 위한 전력변환장치의 유로 설계

In the thermal design stage, a design engineer of the power conversion system (PCS) which is used in wind power, photovoltaic, and energy storage system should evaluate whether the design criterion of the junction temperature in a power semiconductor device such as an insulated-gate bipolar transistor (IGBT) is satisfied or not. Here, an engineer designs the airflow passage structure of the PCS in order to exhaust effectively the heat that is generated by electronic components in the PCS. In this paper, it was compared with different airflow passage structures of the PCS using the numerical method to thermal performance indexes that are the airflow rate of the heat sink attached at the IGBT module and the junction temperature of the IGBT module. In order to satisfy the design criterion of the junction temperature of 130℃, the structure of the airflow passage is that the appearance and the dimension of the prototype is maintained in the same manner as the design 2, and the area of supply side louvers is maintained at least 0.3 ㎡ under the rated load condition considering the numerical error of 5 percent.