论文信息 - Atomic oxygen and the thermal oxidation of silicon

Atomic oxygen and the thermal oxidation of silicon

Both molecular and atomic oxygen have been postulated to react with silicon in the thermal oxidation process. At temperatures below 700 °C very little film growth is observed in molecular oxygen. When silicon is allowed to react thermally with a flowing afterglow containing atomic oxygen an enhancement in film growth is observed. Film growth in this mode exhibits little temperature activation and is speculated to be due to a constant concentration of atomic oxygen.

Jerzy Ruzyllo | Andrew M. Hoff | A. Hoff | J. Ruzyllo

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