Phase formation in sputter deposited metal (V, Nb, Zr, Y) oxides: Relationship to metal, metal–oxygen, and oxygen flux

It is well documented that an oxide is formed on the surface of a metal target sputtered in an O2‐bearing discharge. The sputtered flux will, in general, consist of metal atoms (M) and metal–oxygen molecules (M–O). In this study, a series of metal (M=V, Nb, Y, Zr) targets were sputtered in rare gas–O2 discharges. Films were grown on substrates at low temperatures (70–325 °C). Optical emission spectrometry was used to index the growth environment in terms of (a) the fractional flux of M and M–O species to the growth interface, and (b) the availability of oxygen for reaction at the growth interface. The interrelation of process parameters, phase formation, and the growth environment indices was presented in the form of phase maps. Common features in the phase maps of all systems were identified.