Characterization of Al-implanted 4H SiC High Voltage Diodes

The properties of 4H-SiC chemical vapor deposition epitaxial layers were studied by different methods. The effects of structural defects in 4H-SiC epitaxial layers on electrical and luminescence properties of Al high dose ion implanted p+-n junctions were studied. It has been shown that the structural imperfections of low-doped layers affect some electrical characteristics of the ion doped p+-n junctions created in these epitaxial layers.