Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.
暂无分享,去创建一个
[1] Qiyuan He,et al. Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications. , 2012, Small.
[2] A. Ramasubramaniam. Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides , 2012 .
[3] Zhiyuan Zeng,et al. An effective method for the fabrication of few-layer-thick inorganic nanosheets. , 2012, Angewandte Chemie.
[4] Kinam Kim,et al. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals , 2012, Nature Communications.
[5] J. Kong,et al. Integrated circuits based on bilayer MoS₂ transistors. , 2012, Nano letters.
[6] Zhiyuan Zeng,et al. Electrochemically reduced single-layer MoS₂ nanosheets: characterization, properties, and sensing applications. , 2012, Small.
[7] Lain-Jong Li,et al. Highly flexible MoS2 thin-film transistors with ion gel dielectrics. , 2012, Nano letters.
[8] A. Javey,et al. High-performance single layered WSe₂ p-FETs with chemically doped contacts. , 2012, Nano letters.
[9] S. Min,et al. MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap. , 2012, Nano letters.
[10] Ji Feng,et al. Valley-selective circular dichroism of monolayer molybdenum disulphide , 2012, Nature Communications.
[11] J. Coleman,et al. Preparation of High Concentration Dispersions of Exfoliated MoS2 with Increased Flake Size , 2012 .
[12] G. Steele,et al. Laser-thinning of MoS₂: on demand generation of a single-layer semiconductor. , 2012, Nano letters.
[13] Jing Kong,et al. van der Waals epitaxy of MoS₂ layers using graphene as growth templates. , 2012, Nano letters.
[14] Bin Liu,et al. Hysteresis in single-layer MoS2 field effect transistors. , 2012, ACS nano.
[15] Jonathan N. Coleman,et al. Correction to “Role of Solubility Parameters in Understanding the Steric Stabilization of Exfoliated Two-Dimensional Nanosheets by Adsorbed Polymers” , 2012 .
[16] C. Dimitrakopoulos,et al. State-of-the-art graphene high-frequency electronics. , 2012, Nano letters.
[17] Keliang He,et al. Control of valley polarization in monolayer MoS2 by optical helicity. , 2012, Nature nanotechnology.
[18] Walter R. L. Lambrecht,et al. Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS 2 , 2012 .
[19] Jun Dai,et al. Giant Moisture Responsiveness of VS2 Ultrathin Nanosheets for Novel Touchless Positioning Interface , 2012, Advanced materials.
[20] Can Ataca,et al. Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure , 2012 .
[21] Bin Yu,et al. Molybdenum disulphide/titanium dioxide nanocomposite-poly 3-hexylthiophene bulk heterojunction solar cell , 2012 .
[22] Mustafa Lotya,et al. Solvent Exfoliation of Transition Metal Dichalcogenides: Dispersability of Exfoliated Nanosheets Varies Only Weakly between Compounds /v Sol (mol/ml) Characterisation of Dispersions , 2022 .
[23] Gang Lu,et al. Optical identification of single- and few-layer MoS₂ sheets. , 2012, Small.
[24] Bin Wang,et al. Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment , 2012, Nature Communications.
[25] K. Jacobsen,et al. Phonon-limited mobility inn-type single-layer MoS2from first principles , 2012 .
[26] Lain‐Jong Li,et al. Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition , 2012, Advanced materials.
[27] Yu‐Chuan Lin,et al. Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. , 2012, Nano letters.
[28] H. Atwater,et al. Photonic design principles for ultrahigh-efficiency photovoltaics. , 2012, Nature materials.
[29] Yoshihiro Iwasa,et al. Ambipolar MoS2 thin flake transistors. , 2012, Nano letters.
[30] Wang Yao,et al. Valley polarization in MoS2 monolayers by optical pumping. , 2012, Nature nanotechnology.
[31] G. Dambrine,et al. Flexible gigahertz transistors derived from solution-based single-layer graphene. , 2012, Nano letters.
[32] Z. Yin,et al. Single-layer MoS2 phototransistors. , 2012, ACS nano.
[33] V. May,et al. Photoinduced switching of the current through a single molecule: effects of surface plasmon excitations of the leads. , 2012, Nano letters.
[34] Minoru Osada,et al. Two‐Dimensional Dielectric Nanosheets: Novel Nanoelectronics From Nanocrystal Building Blocks , 2012, Advanced materials.
[35] Hua Zhang,et al. Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature. , 2012, Small.
[36] Kourosh Kalantar-Zadeh,et al. Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method. , 2012, Nanoscale.
[37] N. Peres,et al. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures , 2011, Science.
[38] I. Grigorieva,et al. Unimpeded Permeation of Water Through Helium-Leak–Tight Graphene-Based Membranes , 2011, Science.
[39] Wang Yao,et al. Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. , 2011, Physical review letters.
[40] P. Ajayan,et al. Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate , 2011, 1111.5072.
[41] Zhiyuan Zeng,et al. Single-layer semiconducting nanosheets: high-yield preparation and device fabrication. , 2011, Angewandte Chemie.
[42] Andras Kis,et al. Stretching and breaking of ultrathin MoS2. , 2011, ACS nano.
[43] Hao‐Li Zhang,et al. A mixed-solvent strategy for efficient exfoliation of inorganic graphene analogues. , 2011, Angewandte Chemie.
[44] Branimir Radisavljevic,et al. Integrated circuits and logic operations based on single-layer MoS2. , 2011, ACS nano.
[45] Hisato Yamaguchi,et al. Photoluminescence from chemically exfoliated MoS2. , 2011, Nano letters.
[46] J. Brivio,et al. Ripples and layers in ultrathin MoS2 membranes. , 2011, Nano letters.
[47] Yingchun Cheng,et al. Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors , 2011 .
[48] L. Wirtz,et al. Phonons in single-layer and few-layer MoS2 , 2011 .
[49] C N R Rao,et al. Graphene analogues of layered metal selenides. , 2011, Dalton transactions.
[50] Ho-Cheol Kim,et al. Abundant non-toxic materials for thin film solar cells: Alternative to conventional materials , 2011 .
[51] J. Coleman,et al. Electrical Characteristics of Molybdenum Disulfide Flakes Produced by Liquid Exfoliation , 2011, Advanced materials.
[52] Mustafa Lotya,et al. Large‐Scale Exfoliation of Inorganic Layered Compounds in Aqueous Surfactant Solutions , 2011, Advanced materials.
[53] Youngki Yoon,et al. How good can monolayer MoS₂ transistors be? , 2011, Nano letters.
[54] Qing Hua Wang,et al. Bi- and trilayer graphene solutions. , 2011, Nature nanotechnology.
[55] Jing Guo,et al. Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors , 2011, IEEE Transactions on Electron Devices.
[56] C. Dimitrakopoulos,et al. Wafer-Scale Graphene Integrated Circuit , 2011, Science.
[57] Weihua Tang,et al. First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers , 2011 .
[58] Thomas Heine,et al. Influence of quantum confinement on the electronic structure of the transition metal sulfide T S 2 , 2011, 1104.3670.
[59] Luis A. Agapito,et al. Room-temperature high on/off ratio in suspended graphene nanoribbon field-effect transistors , 2011, Nanotechnology.
[60] F. Guinea,et al. Dirac cones reshaped by interaction effects in suspended graphene (vol 7, pg 701, 2011) , 2011, 1104.1396.
[61] F. Xia,et al. High-frequency, scaled graphene transistors on diamond-like carbon , 2011, Nature.
[62] K. Novoselov,et al. Micrometer-scale ballistic transport in encapsulated graphene at room temperature. , 2011, Nano letters.
[63] A. Radenović,et al. Single-layer MoS2 transistors. , 2011, Nature nanotechnology.
[64] J. Coleman,et al. Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials , 2011, Science.
[65] B. Radisavljevic,et al. Visibility of dichalcogenide nanolayers , 2010, Nanotechnology.
[66] M. Strano,et al. Synthesis of Atomically Thin WO3 Sheets from Hydrated Tungsten Trioxide. , 2010 .
[67] D. Jena,et al. Effect of high- κ gate dielectrics on charge transport in graphene-based field effect transistors , 2010 .
[68] M. Strano,et al. Synthesis of Atomically Thin WO3 Sheets from Hydrated Tungsten Trioxide , 2010 .
[69] F. Guinea,et al. Limits on charge carrier mobility in suspended graphene due to flexural phonons. , 2010, Physical review letters.
[70] Kwang S. Kim,et al. Roll-to-roll production of 30-inch graphene films for transparent electrodes. , 2010, Nature nanotechnology.
[71] A. Ferrari,et al. Graphene Photonics and Optoelectroncs , 2010, CLEO 2012.
[72] D. Late,et al. MoS2 and WS2 analogues of graphene. , 2010, Angewandte Chemie.
[73] K. Shepard,et al. Boron nitride substrates for high-quality graphene electronics. , 2010, Nature nanotechnology.
[74] Changgu Lee,et al. Anomalous lattice vibrations of single- and few-layer MoS2. , 2010, ACS nano.
[75] J. Shan,et al. Atomically thin MoS₂: a new direct-gap semiconductor. , 2010, Physical review letters.
[76] B. Hammer,et al. Bandgap opening in graphene induced by patterned hydrogen adsorption. , 2010, Nature materials.
[77] A. Splendiani,et al. Emerging photoluminescence in monolayer MoS2. , 2010, Nano letters.
[78] G. Eda,et al. Blue Photoluminescence from Chemically Derived Graphene Oxide , 2009, Advanced materials.
[79] F. Schwierz. Graphene transistors. , 2010, Nature nanotechnology.
[80] K. Novoselov,et al. Making graphene luminescent by oxygen plasma treatment. , 2009, ACS nano.
[81] Christian Kisielowski,et al. Atomically thin hexagonal boron nitride probed by ultrahigh-resolution transmission electron microscopy , 2009 .
[82] A. Green,et al. Solution phase production of graphene with controlled thickness via density differentiation. , 2009, Nano letters.
[83] P. Avouris,et al. Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene , 2009, 0908.0749.
[84] SUPARNA DUTTASINHA,et al. Graphene: Status and Prospects , 2009, Science.
[85] T. Tang,et al. Direct observation of a widely tunable bandgap in bilayer graphene , 2009, Nature.
[86] Yuyuan Tian,et al. Dielectric screening enhanced performance in graphene FET. , 2009, Nano letters.
[87] S. Banerjee,et al. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils , 2009, Science.
[88] M. Osada,et al. Exfoliated oxide nanosheets: new solution to nanoelectronics , 2009 .
[89] B. H. Weiller,et al. Practical chemical sensors from chemically derived graphene. , 2009, ACS nano.
[90] S. Lebègue,et al. Electronic structure of two-dimensional crystals from ab-initio theory , 2009, 0901.0440.
[91] N. Kybert,et al. Intrinsic response of graphene vapor sensors. , 2008, Nano letters.
[92] F. Guinea,et al. The electronic properties of graphene , 2007, Reviews of Modern Physics.
[93] L. Forró,et al. From Mott state to superconductivity in 1T-TaS2. , 2008, Nature materials.
[94] Prashant V. Kamat,et al. Quantum Dot Solar Cells. Semiconductor Nanocrystals as Light Harvesters , 2008 .
[95] W. D. de Heer,et al. The growth and morphology of epitaxial multilayer graphene , 2008 .
[96] N. Peres,et al. Fine Structure Constant Defines Visual Transparency of Graphene , 2008, Science.
[97] Phaedon Avouris,et al. Carbon-nanotube photonics and optoelectronics , 2008 .
[98] A. M. van der Zande,et al. Impermeable atomic membranes from graphene sheets. , 2008, Nano letters.
[99] J. Coleman,et al. High-yield production of graphene by liquid-phase exfoliation of graphite. , 2008, Nature nanotechnology.
[100] Jannik C. Meyer,et al. The two-dimensional phase of boron nitride: Few-atomic-layer sheets and suspended membranes , 2008 .
[101] Zvonko G. Vranesic,et al. Fundamentals of Digital Logic with VHDL Design , 2008 .
[102] H. Dai,et al. Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors , 2008, Science.
[103] C. N. Lau,et al. Superior thermal conductivity of single-layer graphene. , 2008, Nano letters.
[104] S. Xiao,et al. Intrinsic and extrinsic performance limits of graphene devices on SiO2. , 2007, Nature nanotechnology.
[105] E. H. Hwang,et al. Scattering mechanisms and Boltzmann transport in graphene , 2007, 0708.0404.
[106] K. Müllen,et al. Transparent, conductive graphene electrodes for dye-sensitized solar cells. , 2008, Nano letters.
[107] S. Xiao,et al. Intrinsic and extrinsic performance limits of graphene devices on SiO 2 , 2008 .
[108] Charles M. Lieber,et al. Nanoelectronics from the bottom up. , 2007, Nature materials.
[109] G. Galli,et al. Electronic properties of MoS2 nanoparticles , 2007 .
[110] Wang Yao,et al. Valley-contrasting physics in graphene: magnetic moment and topological transport. , 2007, Physical review letters.
[111] G. Frey,et al. Self-assembled lamellar MoS2, SnS2 and SiO2 semiconducting polymer nanocomposites , 2007, Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences.
[112] D. Jena,et al. Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering. , 2007, Physical review letters.
[113] P. Kim,et al. Energy band-gap engineering of graphene nanoribbons. , 2007, Physical review letters.
[114] Michael S. Fuhrer,et al. Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides , 2007 .
[115] K. Novoselov,et al. Detection of individual gas molecules adsorbed on graphene. , 2006, Nature materials.
[116] S. Sarma,et al. Carrier transport in two-dimensional graphene layers. , 2006, Physical review letters.
[117] C. Beenakker,et al. Valley filter and valley valve in graphene , 2006, cond-mat/0608533.
[118] Salvador Ordóñez,et al. Adsorption of volatile organic compounds onto carbon nanotubes, carbon nanofibers, and high-surface-area graphites. , 2007, Journal of colloid and interface science.
[119] Garry Rumbles,et al. Excitons in nanoscale systems , 2006, Nature materials.
[120] H. Tributsch,et al. Photosensitization of nanostructured TiO2 with WS2 quantum sheets. , 2006, The journal of physical chemistry. B.
[121] K. Novoselov,et al. Two-dimensional atomic crystals. , 2005, Proceedings of the National Academy of Sciences of the United States of America.
[122] J. Seiber. Status and Prospects , 2005 .
[123] Joshua E. Goldberger,et al. SEMICONDUCTOR NANOWIRES AND NANOTUBES , 2004 .
[124] Jiaguo Yu,et al. Preparation and photocatalytic behavior of MoS2 and WS2 nanocluster sensitized TiO2. , 2004, Langmuir : the ACS journal of surfaces and colloids.
[125] Jean-Pierre Colinge,et al. Multiple-gate SOI MOSFETs , 2004 .
[126] V. Podzorov,et al. High-mobility field-effect transistors based on transition metal dichalcogenides , 2004, cond-mat/0401243.
[127] Hagai Cohen,et al. Solution-processed anodes from layer-structure materials for high-efficiency polymer light-emitting diodes. , 2003, Journal of the American Chemical Society.
[128] Richard H. Friend,et al. Inorganic solution-processed hole-injecting and electron-blocking layers in polymer light-emitting diodes , 2002 .
[129] R. Péchou,et al. Light emission from spectral analysis of Au/MoS2 nanocontacts stimulated by scanning tunneling microscopy , 2002 .
[130] A. Nozik. Quantum dot solar cells , 2002 .
[131] E. D. Crozier,et al. Structures of exfoliated single layers of WS 2 , MoS 2 , and MoSe 2 in aqueous suspension , 2002 .
[132] E. Benavente,et al. Intercalation chemistry of molybdenum disulfide , 2002 .
[133] J. Nørskov,et al. One-dimensional metallic edge states in MoS2. , 2001, Physical review letters.
[134] Weichao Yu,et al. Hydrothermal Synthesis and Characterization of Single-Molecular-Layer MoS2 and MoSe2 , 2001 .
[135] P. Krüger,et al. Band structure of MoS 2 , MoSe 2 , and α − MoTe 2 : Angle-resolved photoelectron spectroscopy and ab initio calculations , 2001, cond-mat/0107541.
[136] Weichao Yu,et al. Hydrothermal Synthesis of MoS2 and Its Pressure-Related Crystallization , 2001 .
[137] A. H. Castro Neto. Charge density wave, superconductivity, and anomalous metallic behavior in 2D transition metal dichalcogenides. , 2001, Physical review letters.
[138] Ron Dagani,et al. CARBON-BASED ELECTRONICS , 1999 .
[139] M. Kanatzidis,et al. Exfoliated-Restacked Phase of WS2. , 1997 .
[140] J. Bernède,et al. MS2 (M = W, Mo) photosensitive thin films for solar cells , 1997 .
[141] M. Kanatzidis,et al. Exfoliated-Restacked Phase of WS2 , 1997 .
[142] M. Kanatzidis,et al. Toward Pillared Layered Metal Sulfides. Intercalation of the Chalcogenide Clusters Co6Q8(PR3)6 (Q = S, Se, and Te and R = Alkyl) into MoS2 , 1996 .
[143] Kobayashi,et al. Electronic structure and scanning-tunneling-microscopy image of molybdenum dichalcogenide surfaces. , 1995, Physical review. B, Condensed matter.
[144] H. Morkoç,et al. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies , 1994 .
[145] Bruce A. Parkinson,et al. Work Function and Photothreshold of Layered Metal Dichalcogenides , 1994 .
[146] M. Asif Khan,et al. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction , 1993 .
[147] A. D. Yoffe,et al. Low-dimensional systems: Quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems , 1993 .
[148] M. Kanatzidis,et al. Encapsulation of polymers into MoS2 and metal to insulator transition in metastable MoS2 , 1993 .
[149] C. Julien,et al. Lattice dynamics of lithium intercalated MoS2 , 1991 .
[150] Risto M. Nieminen,et al. Electronic Properties of Two-Dimensional Systems , 1988 .
[151] H. Sakaki,et al. Interface roughness scattering in GaAs/AlAs quantum wells , 1987 .
[152] Haas,et al. Electronic structure of MoSe2, MoS2, and WSe2. II. The nature of the optical band gaps. , 1987, Physical review. B, Condensed matter.
[153] Richard H. Friend,et al. Electronic properties of intercalation complexes of the transition metal dichalcogenides , 1987 .
[154] S. Morrison,et al. Single-layer MoS2 , 1986 .
[155] T. W. Halstead,et al. Status and Prospects , 1984 .
[156] S. Chandra,et al. Electrodeposited semiconducting molybdenum selenide films. II. Optical, electrical, electrochemical and photoelectrochemical solar cell studies , 1984 .
[157] B. Ridley. The electron-phonon interaction in quasi-two-dimensional semiconductor quantum-well structures , 1982 .
[158] B. Parkinson,et al. Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides , 1982 .
[159] W. Y. Liang,et al. The reflectivity spectra of some group VA transition metal dichalcogenides , 1975 .
[160] M. Dines. Lithium intercalation via n-Butyllithium of the layered transition metal dichalcogenides , 1975 .
[161] J. Wilson,et al. Charge-density waves and superlattices in the metallic layered transition metal dichalcogenides , 1975 .
[162] L. Mattheiss. Band Structures of Transition-Metal-Dichalcogenide Layer Compounds. , 1973 .
[163] J. Wilson,et al. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties , 1969 .
[164] S. M. Sze,et al. Physics of semiconductor devices , 1969 .
[165] R. Fivaz,et al. Mobility of Charge Carriers in Semiconducting Layer Structures , 1967 .
[166] R. Frindt. The optical properties of single crystals of WSe2 and MoTe2 , 1963 .
[167] R. Frindt,et al. Physical properties of layer structures : optical properties and photoconductivity of thin crystals of molybdenum disulphide , 1963, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.
[168] G. Galli,et al. Electronic Properties of MoS 2 Nanoparticles , 2022 .