论文信息 - Monolithically integrated receiver front end: In/sub 0.53/Ga/sub 0.47/As p-i-n amplifier

Monolithically integrated receiver front end: In/sub 0.53/Ga/sub 0.47/As p-i-n amplifier

Monolithically integrated InGaAs p-i-n amplifiers have been successfully fabricated. The structure utilizes a vertical integration of a p-i-n diode and recessed-gate InP MISFETs, while maintaining a planar surface for fine-line photolithography. The preamplifier consists of a gain stage and a buffer stage, both made of InP MISFETs with aluminium phosphorous oxide as gate insulator. At 400 Mb/s, the receiver sensitivity is better than -27 dBm for 1*10/sup -9/ bit error rate. >

[2] F. Capasso,et al. High-speed InP/Ga0.47In0.53As superlattice avalanche photodiodes with very low background doping grown by continuous trichloride vapor-phase epitaxy , 1986 .

[3] N. Schumaker,et al. The effect of gas temperature on the growth of InP by atomspheric pressure metal-organic chemical vapor deposition using trimethyl indium and PH3 sources , 1985 .

[4] Kenichi Kasahara,et al. Monolithically integrated In(0.53)Ga(0.47)As-PIN/InP-MISFET photoreceiver , 1984 .

[5] U. Koren,et al. Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP , 1982 .

[6] Y. Sasai,et al. Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistors , 1984 .

[7] V. G. Riggs,et al. Growth of Fe-doped semi-insulating InP by MOCVD , 1984 .

[8] B. Molnar. Close‐contact annealing of ion‐implanted GaAs and InP , 1980 .

[9] R. Chang,et al. Inversion layers on germanium with low‐temperature‐deposited aluminum‐phosphorus oxide dielectric films , 1986 .

[10] B. Tell,et al. Monolithic integration of a planar embedded InGaAs p-i-n detector with InP depletion-mode FET's , 1985, IEEE Transactions on Electron Devices.