A 50-dB image-rejection SiGe-HBT based low noise amplifier in 24-GHz band

An image-rejection low-noise amplifier (LNA) based on 0.18-μm SiGe BiCMOS technology was developed in order to create a 24GHz-band RF receiver front-end. Its high image-rejection ratio (IRR) in the quasi-millimeter-wave frequency region is due to the use of a notch feedback circuit. The LNA has a 14-dB gain at an operating frequency of 27.2 GHz and an IRR greater than 50 dB IRR at an image frequency of 21.6 GHz. While its IIP3 is −14 dBm, its power consumption with a 1.2-V power supply is also low, 7.9 mW.

[1]  Sang-Gug Lee,et al.  A 5.25-GHz image rejection RF front-End Receiver With Polyphase filters , 2006 .

[2]  B. Floyd,et al.  A silicon 60GHz receiver and transmitter chipset for broadband communications , 2006, 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.

[3]  Trung-Kien Nguyen,et al.  Image-rejection CMOS low-noise amplifier design optimization techniques , 2005, IEEE Transactions on Microwave Theory and Techniques.

[4]  Behzad Razavi.  Recent advances in RF integrated circuits , 1997 .

[5]  B. Gaucher,et al.  A Silicon 60-GHz Receiver and Transmitter Chipset for Broadband Communications , 2006, IEEE Journal of Solid-State Circuits.

[6]  Liang-Hung Lu,et al.  A 24-GHz Receiver Frontend With an LO Signal Generator in 0.18-$\mu$m CMOS , 2008, IEEE Transactions on Microwave Theory and Techniques.

[7]  Yuanjin Zheng,et al.  A 0.18-/spl mu/m CMOS UWB LNA with 5 GHz Interference Rejection , 2007, 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.

[8]  Xiang Guan,et al.  A 24-GHz CMOS front-end , 2004, IEEE Journal of Solid-State Circuits.