A temperature-stabilized SOI voltage reference based on threshold voltage difference between enhancement and depletion NMOSFET's

A temperature-stabilized silicon-on-insulator (SOI) voltage reference is presented. It is based on the threshold voltage difference between enhancement and depletion SOI NMOSFETs that have the same channel doping concentration but of opposite type. The circuit has been realized on a SIMOX wafer using an n/sup +/-poly gate and a LOCOS isolation process. The threshold voltages of the enhancement and depletion SOI NMOSFETs show almost the same temperature dependence when a suitable back-gate bias is applied. Experimental results show a temperature coefficient of 33.8 p.p.m./ degrees C over the temperature range of -50 to 75 degrees C. The variation of threshold voltage difference with temperature is small, and this circuit becomes more advantageous as the front-gate oxide is scaled down or the bias current is reduced. >

[1]  H. Tango,et al.  Two-dimensional simulation and measurement of high-performance MOSFETs made on a very thin SOI film , 1989 .

[2]  J.-P. Colinge,et al.  High-speed, low-power, implanted-buried-oxide CMOS circuits , 1986, IEEE Electron Device Letters.

[3]  M. Tomizawa,et al.  Design considerations for thin-film SOI/CMOS device structures , 1989 .

[4]  Hyung-Kyu Lim,et al.  Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's , 1983, IEEE Transactions on Electron Devices.

[5]  Kang-Deog Suh,et al.  A self-consistent analytic threshold voltage model for thin SOI n-channel MOSFETs , 1991 .

[6]  J. Colinge.  Subthreshold slope of thin-film SOI MOSFET's , 1986, IEEE Electron Device Letters.

[7]  High performance SOIMOSFET using ultra-thin SOI film , 1987, 1987 International Electron Devices Meeting.

[8]  Eric Vittoz,et al.  A Low-Voltage CMOS Bandgap Reference , 1978, ESSCIRC 78: 4th European Solid State Circuits Conference - Digest of Technical Papers.

[9]  F. P. Heiman,et al.  Temperature dependence of n-type MOS transistors , 1965 .

[10]  Y.P. Tsividis,et al.  A CMOS voltage reference , 1978, IEEE Journal of Solid-State Circuits.

[11]  Sidney Soclof.  Analog integrated circuits , 1985 .

[12]  P.R. Gray,et al.  A precision curvature-compensated CMOS bandgap reference , 1983, IEEE Journal of Solid-State Circuits.

[13]  J. C. Lee,et al.  Demonstration of the benefits of SOI for high temperature operation , 1988, Proceedings. SOS/SOI Technology Workshop.

[14]  R. J. Widlar,et al.  New developments in IC voltage regulators , 1970 .

[15]  G. Groeseneken,et al.  Temperature dependence of threshold voltage in thin-film SOI MOSFETs , 1990, IEEE Electron Device Letters.

[16]  R.A. Blauschild,et al.  A new NMOS temperature-stable voltage reference , 1978, IEEE Journal of Solid-State Circuits.

[17]  F. Balestra,et al.  Performance and physical mechanisms in SIMOX MOS transistors operated at very low temperature , 1990 .

[18]  A. Brokaw,et al.  A simple three-terminal IC bandgap reference , 1974 .