论文信息 - High performance HgCdTe photoconductive devices grown by metalorganic chemical vapor deposition

High performance HgCdTe photoconductive devices grown by metalorganic chemical vapor deposition

Photoconductive detector arrays fabricated from metalorganic chemical vapor deposited epitaxial films of Hg0.8Cd0.2Te on both CdTe and Al2O3 substrates are reported for the first time. These devices operate in the 8–12‐μm spectral region and have detectivities of 3.6×1010 and 2.6×1010 cm Hz1/2/W for CdTe and Al2O3 substrates, respectively. These results approach background limited performance, and as such establish the feasibility of metalorganic chemical vapor deposited HgCdTe for use in advanced infrared detection systems.

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