Approximate process-parameter dependent symbolic calculation of harmonic distortion in log-domain: the lossy integrator case-study

This paper attempts to estimate in an approximate way the impact of the basic bipolar process parameters upon harmonic distortion for the log-domain lossy integrator case. A symbolic transistor-level calculation is elaborated, based on the Charge-Control-Model (CCM) for the Bipolar Junction Transistor (BJT). Results correlating the BJT finite beta and parasitic base and emitter resistance with the harmonic distortion level present at the output are provided.

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