Strengths and Limitations of the Vacancy Engineering Approach for the Control of Dopant Diffusion and Activation in Silicon
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A. Claverie | F. Cristiano | H. Jaouen | O. Marcelot | A. Halimaoui | F. Giannazzo | F. Cayrel | D. Alquier | V. Raineri | W. Lerch | A. Pakfar | L. Rubin | M. Gavelle | S. Paul | F. Sévérac | C. Armand | Nikolay Cherkashim