High-Performance Optical Gating in Junction Device based on Vanadium Dioxide Thin Film Grown by Sol-Gel Method

In this paper, a high-performance optical gating in a junction device based on a vanadium dioxide dioxide (VO 2 ) thin film grown by a sol-gel method was experimentally demonstrated by directly illuminating the VO 2 film of the device with an infrared light at ~1554.6 ㎚. The threshold voltage of the fabricated device could be tuned by ~76.8 % at an illumination power of ~39.8 ㎽ resulting in a tuning efficiency of ~1.930 %/㎽, which was ~4.9 times as large as that obtained in the previous device fabricated using the VO 2 thin film deposited by a pulsed laser deposition method. The rising and falling times of the optical gating operation were measured as ~50 ㎳ and ~200 ㎳, respectively, which were ~20 times as rapid as those obtained in the previous device.

[1]  Changhong Chen,et al.  Optical phonons assisted infrared absorption in VO2 based bolometer , 2007 .

[2]  S Lupi,et al.  Evidence of a pressure-induced metallization process in monoclinic VO2. , 2007, Physical review letters.

[3]  Gyungock Kim,et al.  Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices , 2004 .

[4]  Byung-Gyu Chae,et al.  Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor , 2007 .

[5]  Gyungock Kim,et al.  Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film , 2007 .

[6]  F. J. Morin,et al.  Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature , 1959 .

[7]  Sungyoul Choi,et al.  Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film , 2008 .

[8]  X. Yi,et al.  Optical switch based on vanadium dioxide thin films , 2004 .

[9]  Binghao Li,et al.  Spatiotemporal Location Fingerprint Generation Using Extended Signal Propagation Model , 2012 .

[10]  Byung-Gyu Chae,et al.  Highly oriented VO2 thin films prepared by sol-gel deposition method , 2005 .

[11]  Sung-il Cho,et al.  Current-induced metal insulator transition in VOx thin film prepared by rapid-thermal-annealing , 2006 .

[12]  Xinjian Yi,et al.  Characterizations of VO2-based uncooled microbolometer linear array , 2001 .

[13]  A. Cavalleri,et al.  Femtosecond Structural Dynamics in VO2 during an Ultrafast Solid-Solid Phase Transition. , 2001, Physical review letters.

[14]  Sergiy Lysenko,et al.  Light-induced ultrafast phase transitions in VO2 thin film , 2006 .