Analysis of copper-rich precipitates in silicon: chemical state, gettering, and impact on multicrystalline silicon solar cell material
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B. Lai | M. Marcus | T. Buonassisi | A. Istratov | E. Weber | T. Ciszek | Z. Cai | M. Heuer | A. A. Istratov
[1] Richard Celestre,et al. Beamline 10.3.2 at ALS: a hard X-ray microprobe for environmental and materials sciences. , 2004, Journal of synchrotron radiation.
[2] T. Buonassisi,et al. X-ray beam induced current/microprobe x-ray fluorescence: synchrotron radiation based x-ray microprobe techniques for analysis of the recombination activity and chemical nature of metal impurities in silicon , 2004 .
[3] O. Breitenstein,et al. Observation of transition metals at shunt locations in multicrystalline silicon solar cells , 2004 .
[4] B. Lai,et al. Applications of synchrotron radiation X-ray techniques on the analysis of the behavior of transition metals in solar cells and single-crystalline silicon with extended defects , 2003 .
[5] M. Kittler,et al. Estimation of the Upper Limit of the Minority-Carrier Diffusion Length in Multicrystalline Silicon: Limitation of the Action of Gettering and Passivation on Dislocations , 2003 .
[6] J. Kalejs,et al. Metal Content of Multicrystalline Silicon for Solar Cells and its Impact on Minority Carrier Diffusion Length , 2003 .
[7] S. Estreicher,et al. Copper interactions with H, O, and the self-interstitial in silicon , 2003 .
[8] M. Iwami,et al. Valence band density of states of Cu3Si studied by soft X-ray emission spectroscopy and a first-principle molecular orbital calculation , 2002 .
[9] T. Buonassisi,et al. Application of synchrotron-radiation-based x-ray microprobe techniques for the analysis of recombination activity of metals precipitated at Si/SiGe misfit dislocations , 2002 .
[10] B. Lai,et al. Copper precipitates in silicon: Precipitation, dissolution, and chemical state , 2002 .
[11] Eicke R. Weber,et al. Defect recognition and impurity detection techniques in crystalline silicon for solar cells , 2002 .
[12] T. Wang,et al. Silicon defect and impurity studies using float-zone crystal growth as a tool , 2002 .
[13] T. Buonassisi,et al. X-ray beam induced current—a synchrotron radiation based technique for the in situ analysis of recombination properties and chemical nature of metal clusters in silicon , 2002 .
[14] S. Sutton,et al. Applications of Synchrotron Radiation in Low-Temperature Geochemistry and Environmental Science , 2002 .
[15] Eicke R. Weber,et al. Physics of Copper in Silicon , 2002 .
[16] A. Istratov,et al. Recombination activity of copper in silicon , 2001 .
[17] M. Werner,et al. Nanometer-scale metal precipitates in multicrystalline silicon solar cells , 2001 .
[18] S. Myers,et al. Copper gettering by aluminum precipitates in aluminum-implanted silicon , 2001 .
[19] H. D. Bist,et al. Thin film of aluminum oxide through pulsed laser deposition: a micro-Raman study , 2001 .
[20] Seifert,et al. Out-diffusion and precipitation of copper in silicon: An electrostatic model , 2000, Physical review letters.
[21] R. Celestre,et al. Synchrotron-based impurity mapping , 2000 .
[22] B. Lai,et al. Performance of a high-resolution x-ray microprobe at the Advanced Photon Source , 1999 .
[23] E. Weber,et al. Metal impurity precipitates in silicon: chemical state and stability , 1999 .
[24] S. Estreicher. Rich chemistry of copper in crystalline silicon , 1999 .
[25] B. Lai,et al. Nanometer focusing of hard x rays by phase zone plates , 1999 .
[26] Robert Hull,et al. Properties of Crystalline Silicon , 1999 .
[27] W. Schröter,et al. STRUCTURAL AND ELECTRICAL PROPERTIES OF METAL SILICIDE PRECIPITATES IN SILICON , 1999 .
[28] W. Schröter,et al. Electrical and recombination properties of copper-silicide precipitates in silicon , 1998 .
[29] Eicke R. Weber,et al. Intrinsic Diffusion Coefficient of Interstitial Copper in Silicon , 1998 .
[30] W. Schröter,et al. Formation and Properties of Copper Silicide Precipitates in Silicon , 1998 .
[31] M. Marcus,et al. Precipitation of Al2Cu in blanket Al-Cu films , 1997 .
[32] S. McHugo,et al. Release of metal impurities from structural defects in polycrystalline silicon , 1997 .
[33] Bernd O. Kolbesen,et al. Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II , 1997 .
[34] L. Magaud,et al. Electronic structure of Cu3Si , 1996 .
[35] Rong Zhang,et al. Precipitation of Cu and Fe in Dislocated Floating-Zone-Grown Silicon , 1996 .
[36] M. Kittler,et al. Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level , 1995 .
[37] B. Shen,et al. Gettering of copper by bulk stacking faults and punched‐out dislocations in Czochralski‐grown silicon , 1994 .
[38] W. Schröter,et al. Aluminum gettering of cobalt in silicon , 1994 .
[39] G. Rozgonyi,et al. Low‐temperature gettering of trace iron and copper by misfit dislocations in Si/Si(Ge) epitaxy , 1994 .
[40] X. Portier,et al. Electrical and structural studies of copper and nickel precipitates in a Σ=25 silicon bicrystal , 1994 .
[41] H. Richter,et al. Copper silicide precipitation influenced by the strain of a Ge0.02Si0.98 heteroepitaxial layer , 1994 .
[42] A. Broniatowski. Carrier trapping and recombination at copper-decorated grain boundaries in silicon , 1992 .
[43] J. Kalejs,et al. Segregation and impurity effects in silicon grown from the melt in the presence of second phase formation , 1991 .
[44] King-Ning Tu,et al. Formation, oxidation, electronic, and electrical properties of copper silicides , 1990 .
[45] C. Colliex,et al. Fast diffusers Cu and Ni as the origin of electrical activity in a silicon grain boundary , 1989 .
[46] P. N. Gibson,et al. ReflEXAFS investigation of the local atomic structure around Fe during the oxidation of stainless steel , 1989 .
[47] M. Seibt,et al. Characterization of haze‐forming precipitates in silicon , 1988 .
[48] Mark L. Rivers,et al. Elemental measurements with an X-ray microprobe of biological and geological samples with femtogram sensitivity , 1988 .
[49] Eicke R. Weber,et al. Transition metals in silicon , 1983 .
[50] K. Tu,et al. Low temperature gettering of Cu, Ag, and Au across a wafer of Si by Al , 1982 .
[51] S. Murarka,et al. Thermal oxidation of hafnium silicide films on silicon , 1980 .
[52] J. K. Solberg. The crystal structure of η-Cu3Si precipitates in silicon , 1978 .
[53] G. Das. Precipitation of copper in silicon , 1973 .
[54] R. C. Weast. CRC Handbook of Chemistry and Physics , 1973 .
[55] G. Lunde,et al. Copper Precipitate Colonies in Silicon , 1972 .
[56] E. Nes,et al. Precipitate Colonies in Silicon , 1972 .
[57] A. D. Kock,et al. VACANCY CLUSTERS IN DISLOCATION‐FREE SILICON , 1970 .
[58] R. N. Hall,et al. Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide , 1964 .
[59] G. Schwuttke. Study of Copper Precipitation Behavior in Silicon Single Crystals , 1961 .
[60] W. C. Dash. Growth of Silicon Crystals Free from Dislocations , 1959 .
[61] W. C. Dash,et al. Copper Precipitation on Dislocations in Silicon , 1956 .