Active thermal-electronic devices based on heat-sensitive metal-insulator-transition resistor elements

Abstract New active thermal-electronic device family is proposed. These devices operate by means of thermal (or hot electron) coupling between adjacent domains containing heating (input) and thermally sensitive (output) elements. The theoretical background, basic equations and comparison with the conventional electron devices are the main subject of this work. According to the theoretical assumptions the realization of the thermal-electronic device needs a very sensitive output element i.e. temperature sensor. Among others, the metal-insulator transition (MIT) based resistor fulfills this requirement. The MIT resistor itself has got thyristor-like I–V characteristics due to solely the high electric field, or Joule heating induced extremely strong step-like resistance drop at a given temperature. Using thermally coupled MIT and/or other resistors it is possible to build a special device, namely phonsistor (=phonon transistor). This device consists of only bulk type intrinsic domains, containing significantly fewer regions, junctions, depleted layers, surfaces and interfaces compared to conventional electron devices. Thus, these devices can be integrated together with each other and with conventional CMOS, forming, for example, thermal-electronic logic circuit (TELC) for the More-Than-Moore concept devices.

[1]  Heli Jantunen,et al.  Microstructure dependent switching properties of VO2 thin films , 2008 .

[2]  M. M. Atalla,et al.  Hot-carrier triodes with thin-film metal base , 1963 .

[3]  Massimiliano Di Ventra,et al.  Phase-transition driven memristive system , 2009, 0901.0899.

[4]  J. Mizsei,et al.  Thermal-electronic device and integrated circuit , 2016, 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO).

[5]  János Mizsei,et al.  Thermal-electronic logic circuits: Scaling down , 2015, Microelectron. J..

[6]  Baowen Li,et al.  Thermal logic gates: computation with phonons. , 2007, Physical review letters.

[7]  Sahand Hormoz,et al.  Limits on vanadium oxide Mott metal–insulator transition field-effect transistors , 2010 .

[8]  Jyrki Lappalainen,et al.  Thermal-electronic Integrated Circuits Using Thermally Sensitive VO2 MIT Material☆ , 2016 .

[9]  S. Middelhoek,et al.  Classifying solid-state sensors: The S'ensor effect cube' , 1986 .

[10]  Wolfgang Porod,et al.  Device and Architecture Outlook for Beyond CMOS Switches , 2010, Proceedings of the IEEE.

[11]  Jyrki Lappalainen,et al.  Thermal-electronic circuits: Basics, simulations, experiments , 2015, 2015 21st International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).

[12]  V. M. Ghete,et al.  Observation of the Associated Production of a Single Top Quark and a W Boson in pp Collisions at √s=8 TeV , 2014, 1401.2942.

[13]  Philippe Ben-Abdallah,et al.  Near-field thermal transistor. , 2013, Physical review letters.

[14]  G. Larrieu,et al.  Vertical nanowire array-based field effect transistors for ultimate scaling. , 2013, Nanoscale.

[15]  Adrian M. Ionescu,et al.  Nanoelectronics Research for Beyond CMOS Information Processing , 2010, Proc. IEEE.

[16]  Gokul Gopalakrishnan,et al.  Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer , 2010, 1006.4373.

[17]  V. Székely.  New type of thermal-function i.c.: the 4-quadrant multiplier , 1976 .