论文信息 - Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P–V and I–V in HfO₂-Based Ferroelectric FET - 字舞流文

Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P–V and I–V in HfO₂-Based Ferroelectric FET

D. Linten | B. Kaczer | A. Walke | J. van Houdt | B. O’Sullivan | S. Mcmitchell | G. Van den bosch | N. Ronchi | K. Banerjee | L. Breuil | Y. Higashi | M. N. Alam