Investigation of Si as an n-type dopant in AlGaAs grown by molecular beam epitaxy on high index planes

We present a detailed study of n-type silicon doped AlGaAs in a wide range of silicon concentrations. The samples have been grown on (100) and (N11)B GaAs surfaces by molecular beam epitaxy using the same growth conditions for all the surface orientations. Electrical, photoluminescence and secondary ion mass spectrometry measurements have been carried out to investigate the Si incorporation. The total amount of Si incorporated is independent of the growth plane. All the samples display an n-type conductivity, indicating that Si incorporates predominantly on the Al/Ga sites. In general, the samples grown on substrates which present steps in their surface structure [(211)B and (311)B], have a better quality than those grown on flat surfaces [(111)B and (100)]; in particular the best quality is obtained for the samples grown on (311)B plane which display photoluminescence spectra with narrow excitonic structures and high values of Hall mobility and free carrier concentration. On the contrary, the worst results are found for the samples grown on the (111)B surface which are characterized by low mobility values and broad photoluminescence spectra with important defect emissions.

[1]  M. Henini,et al.  Photoluminescence investigation of Si as p-type dopant in AlGaAs grown by molecular beam epitaxy on high-index planes , 1996 .

[2]  M. Henini,et al.  A comparison of Si-doped (100), (111) A, (111) B and (311) B AlxGa1-xAs samples grown by molecular beam epitaxy , 1995 .

[3]  P. Crump,et al.  Growth and electrical transport properties of very high mobility two‐dimensional hole gases displaying persistent photoconductivity , 1994 .

[4]  Lorenzo Pavesi,et al.  Photoluminescence of AlxGa1−xAs alloys , 1994 .

[5]  T. Iida,et al.  Conditions for the formation of defect‐induced bound exciton emissions in GaAs grown by molecular beam epitaxy , 1993 .

[6]  Mohamed Henini,et al.  Orientation dependence of the Si doping of GaAs grown by molecular beam epitaxy , 1993 .

[7]  P. Bhattacharya,et al.  Molecular‐beam epitaxial growth and characterization of silicon‐doped AlGaAs and GaAs on (311)A GaAs substrates and their device applications , 1992 .

[8]  R. H. Williams,et al.  The molecular beam epitaxial growth of GaAs/GaAs(111)B: doping and growth temperature studies , 1992 .

[9]  G. Stillman,et al.  Orientation dependent amphoteric behavior of group IV impurities in the molecular beam epitaxial and vapor phase epitaxial growth of GaAs , 1989 .

[10]  D. Miller,et al.  Plane-selective doped AlGaAs/GaAs double heterostructure light emitting diodes , 1987 .

[11]  E. Mendez,et al.  High mobility two‐dimensional hole gas in an Al0.26Ga0.74As/GaAs heterojunction , 1986 .

[12]  J. Merz,et al.  Molecular‐beam‐epitaxial growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation , 1986 .

[13]  L. Esaki,et al.  Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures , 1985 .

[14]  K. Shinozaki,et al.  Defect‐related emissions in photoluminescence spectra of AlxGa1−xAs grown by molecular beam epitaxy , 1984 .

[15]  A. Saxena.  Photoconductivity storage in Ga1−xAlxAs alloys at low temperatures , 1982 .

[16]  W. I. Wang,et al.  Photoluminescence of AlxGa1−xAs grown by molecular beam epitaxy , 1981 .