论文信息 - Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime - 字舞流文

Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime

C. Hu | J. Kedzierski | E. Anderson | T. King | J. Bokor | P. Xuan | Jakub Kedzierski | Peiqi Xuan | J. Bokor