论文信息 - Lattice incorporation of n‐type dopants in GaAs

Lattice incorporation of n‐type dopants in GaAs

Transmission electron microscopy has been used to investigate precipitates of the n‐type dopants S, Si, Se, and the deep acceptor Cr implanted in GaAs and annealed in the temperature range 800–900 °C. The lowest precipitation was observed for S and Si (4–5%) followed by Se (∼12%). Bulk precipitation was observed for Cr. These results are found to correlate inversely with the percentage substitutionality of S, Si, and Cr measured by the technique of proton induced x‐ray excitation in combination with Rutherford backscattering channeling.

P. Pronko | R. Bhattacharya | A. Rai

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