Ge1-Sn /Si1-Sn SLs lattice-matched to Ge for 1.55 μm lasers
暂无分享,去创建一个
[1] R. Soref,et al. Electrically injected GeSn lasers on Si operating up to 100 K , 2020, 2004.09402.
[2] J. Margetis,et al. Study of Si-Based GeSn Optically Pumped Lasers With Micro-Disk and Ridge Waveguide Structures , 2019, Front. Phys..
[3] A. Nikiforov,et al. Elastically stressed pseudomorphic SiSn island array formation with a pedestal on the Si(1 0 0) substrate using Sn as a growth catalyst , 2019, Journal of Crystal Growth.
[4] G. Capellini,et al. (Invited) Epitaxy of Direct Bandgap Group IV Si-Ge-Sn Alloys towards Heterostructure Light Emitters , 2018, ECS Transactions.
[5] B. Cheng,et al. Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy , 2018, Journal of Crystal Growth.
[6] R. Soref,et al. Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate , 2018 .
[7] A. Nikiforov,et al. Growth of Epitaxial SiSn Films with High Sn Content for IR Converters , 2017 .
[8] Yintang Yang,et al. The Optical Gain of a Si-Based Lattice-Matched Si0.15Ge0.621Sn0.229/Si0.637Ge0.018Sn0.345 MQW Laser , 2017 .
[9] Wei Du,et al. Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics , 2016 .
[10] Frederic Boeuf,et al. Tensile-strained germanium microdisks with circular Bragg reflectors , 2016 .
[11] K. Saitoh,et al. Material Gain Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Light Sources Based on Many-Body Theory , 2015, IEEE Journal of Quantum Electronics.
[12] J. Faist,et al. Lasing in direct-bandgap GeSn alloy grown on Si , 2015, Nature Photonics.
[13] G. Chang,et al. Quantum-confined photoluminescence from Ge(1-x)Sn(x)/Ge superlattices on Ge-buffered Si(001) substrates. , 2013, Optics letters.
[14] Jérôme Faist,et al. Analysis of enhanced light emission from highly strained germanium microbridges , 2013, Nature Photonics.
[15] Krishna C. Saraswat,et al. Achieving direct band gap in germanium through integration of Sn alloying and external strain , 2013 .
[16] Weijun Fan,et al. Electronic band structure and effective mass parameters of Ge1-xSnx alloys , 2012 .
[17] A. Dimoulas,et al. Strain-induced changes to the electronic structure of germanium , 2012, Journal of physics. Condensed matter : an Institute of Physics journal.
[18] Liying Jiang,et al. Direct versus indirect optical recombination in Ge films grown on Si substrates , 2011, 1106.3300.
[19] V. D'costa,et al. Direct integration of active Ge1−x(Si4Sn)x semiconductors on Si(100) , 2009 .
[20] S. Chuang,et al. Theory for n-type doped, tensile-strained Ge-Si(x)Ge(y)Sn1-x-y quantum-well lasers at telecom wavelength. , 2009, Optics express.
[21] Marvin L. Cohen,et al. Possibility of increased mobility in Ge-Sn alloy system , 2007 .
[22] X. Gong,et al. Ab Initio All-Electron Calculation of Absolute Volume Deformation Potentials of IV-IV, III-V, and II-VI Semiconductors: The Chemical Trends , 2006 .
[23] Stefan Zollner,et al. Optical critical points of thin-film Ge 1-y Sn y alloys: A comparative Ge 1-y Sn y /Ge 1-x Si x study , 2006 .
[24] Steven M. Beard,et al. Model for the development of instrument control software using EPICS , 2000, Astronomical Telescopes and Instrumentation.
[25] D.A.B. Miller,et al. Rationale and challenges for optical interconnects to electronic chips , 2000, Proceedings of the IEEE.
[26] S. Laux,et al. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys , 1996 .
[27] Vogl,et al. Electronic-band parameters in strained Si1-xGex alloys on Si1-yGey substrates. , 1993, Physical review. B, Condensed matter.
[28] S. Lewis,et al. EPICS: A control system software co-development success story , 1993 .
[29] Niels Egede Christensen,et al. Electronic structure of α-Sn and its dependence on hydrostatic strain , 1993 .
[30] Polatoglou,et al. Unified approach to the electronic structure of strained Si/Ge superlattices. , 1993, Physical review. B, Condensed matter.
[31] Richard A. Soref,et al. Electro‐optical and nonlinear optical coefficients of ordered group IV semiconductor alloys , 1992 .
[32] S. P. McAlister,et al. A self-consistent two-dimensional model of quantum-well semiconductor lasers: optimization of a GRIN-SCH SQW laser structure , 1992 .
[33] Richard A. Soref,et al. Optical band gap of the ternary semiconductor Si1−x−yGexCy , 1991 .
[34] H. John Caulfield,et al. Optical interconnection of optical modules , 1990, Optics & Photonics.
[35] L. Coldren,et al. Corrections to the expression for gain in GaAs , 1990 .
[36] Van de Walle Cg. Band lineups and deformation potentials in the model-solid theory. , 1989 .
[37] M. Yamada,et al. Anistropy and broadening of optical gain in a GaAs/AlGaAs multiquantum-well laser , 1985, IEEE Journal of Quantum Electronics.
[38] Niloy K. Dutta,et al. Calculated threshold current of GaAs quantum well lasers , 1982 .
[39] U. Rößler,et al. Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties , 2001 .
[40] G.E. Moore,et al. Cramming More Components Onto Integrated Circuits , 1998, Proceedings of the IEEE.
[41] O. Madelung. Semiconductors : group IV elements and III-V compounds , 1991 .
[42] R. Soref,et al. PREDICTED BAND GAP OF THE NEW SEMICONDUCTOR SIGESN , 1991 .