Use of spread spectrum time domain reflectometry to estimate state of health of power converters

A new online measurement and analysis method has been presented in this paper to identify the state of health of power converter circuits. Using spread spectrum time domain reflectometry (SSTDR), impedance in the various current paths inside the converter as well as any fault can be identified without interrupting the circuit's normal operation. Multiple sets of test data have been generated while the SSTDR process is applied to each of the components i.e. the power MOSFETs, the dc bus capacitor and the load. These obtained test data are analyzed to show how these test results are consistent with the impedances in various current paths. An impedance matrix was formed for a non-aged converter and a corresponding matrix using SSTDR data was formed as well. The matrices could be formed for any power converter, and the impedance matrix for the non-aged converter could be considered as a “Reference matrix” for comparison purpose. By comparing these two matrices, the variation in path impedances due to aging could be determined. This research aims to identify the measurable quantities to characterize the aging process, their origins of these quantities and propose convenient methods to measure them.

[1]  Ronald Green,et al.  Application of reliability test standards to SiC Power MOSFETs , 2011, 2011 International Reliability Physics Symposium.

[2]  P. Venet,et al.  Realization of a smart electrolytic capacitor circuit , 2002 .

[3]  Yeoh Lai Seng,et al.  Characterization of Intermetallic Growth for Gold Bonding and Copper Bonding on Aluminum Metallization in Power Transistors , 2007, 2007 9th Electronics Packaging Technology Conference.

[4]  Cynthia Furse,et al.  A critical comparison of reflectometry methods for location of wiring faults , 2006 .

[5]  M. Pecht,et al.  Identification of failure precursor parameters for Insulated Gate Bipolar Transistors (IGBTs) , 2008, 2008 International Conference on Prognostics and Health Management.

[6]  L. Dupont,et al.  Ageing Test Results of low voltage MOSFET Modules for electrical vehicles , 2007, 2007 European Conference on Power Electronics and Applications.

[7]  J. Petzoldt,et al.  Online diagnostics and condition monitoring in voltage source inverters , 2005, 2005 European Conference on Power Electronics and Applications.

[8]  C. Furse,et al.  Mixed-signal reflectometer for location of faults on aging wiring , 2005, IEEE Sensors Journal.

[9]  Pascal Venet,et al.  Failure prediction of electrolytic capacitors during operation of a switchmode power supply , 1998 .

[10]  H. Ertl,et al.  A novel real time monitoring unit for PWM converter electrolytic capacitors , 2008, 2008 IEEE Power Electronics Specialists Conference.

[11]  Sankalita Saha,et al.  Towards Accelerated Aging Methodologies and Health Management of Power MOSFETs (Technical Brief) , 2009 .

[12]  L. Ran,et al.  Monitoring Solder Fatigue in a Power Module Using Case-Above-Ambient Temperature Rise , 2011, IEEE Transactions on Industry Applications.

[13]  C. Furse,et al.  Noise-domain reflectometry for locating wiring faults , 2005, IEEE Transactions on Electromagnetic Compatibility.

[14]  Numerical and experimental results correlation during power MOSFET ageing , 2012, 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems.

[16]  Y. Wang,et al.  Accurate Series-Resistance Extraction From Capacitor Using Time Domain Reflectometry , 2007, IEEE Electron Device Letters.

[17]  B. Farhang-Boroujeny,et al.  Filterbank Multicarrier Reflectometry for Cognitive Live Wire Testing , 2009, IEEE Sensors Journal.

[18]  Sankalita Saha,et al.  Accelerated aging system for prognostics of power semiconductor devices , 2010, 2010 IEEE AUTOTESTCON.

[19]  Peter Tavner,et al.  Monitoring solder fatigue in a power module using the rise of case-above-ambient temperature , 2010, 2010 IEEE Energy Conversion Congress and Exposition.

[20]  J M Anderson,et al.  An on-line fault diagnosis method for power electronic drives , 2011, 2011 IEEE Electric Ship Technologies Symposium.

[21]  Sankalita Saha,et al.  Prognostics of power MOSFET , 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

[22]  Michael Pecht,et al.  Identification of interconnect failure mechanisms using RF impedance analysis , 2009, 2009 IEEE Workshop on Signal Propagation on Interconnects.

[23]  C. Furse,et al.  Analysis of spread spectrum time domain reflectometry for wire fault location , 2005, IEEE Sensors Journal.

[24]  K. Goebel,et al.  Prognostics approach for power MOSFET under thermal-stress aging , 2012, 2012 Proceedings Annual Reliability and Maintainability Symposium.

[25]  T. Shimizu,et al.  Characterization of parasitic impedance in a power electronics circuit board using TDR , 2010, The 2010 International Power Electronics Conference - ECCE ASIA -.

[26]  J.D. van Wyk,et al.  Void induced thermal impedance in power semiconductor modules: some transient temperature effects , 2001, Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248).

[27]  R.R. Harrison,et al.  Low-Power STDR CMOS Sensor for Locating Faults in Aging Aircraft Wiring , 2007, IEEE Sensors Journal.

[28]  Sankalita Saha,et al.  Accelerated aging with electrical overstress and prognostics for power MOSFETs , 2011, IEEE 2011 EnergyTech.