Zinc Selenide Optical Fibers

Semiconductor waveguide fabrication for photonics applications is usually performed in a planar geometry. However, over the past decade a new field of semiconductor-based optical fiber devices has emerged. The drawing of soft chalcogenide semiconductor glasses together with low melting point metals allows for meters-long distributed photoconductive detectors, for example.[1,2] Crystalline unary semiconductors (e.g., Si, Ge) have been chemically deposited at high pressure into silica capillaries,[3,4] allowing the optical and electronic properties of these materials to be exploited for applications such as all-fiber optoelectronics.[5-7] In contrast to planar rib and ridge waveguides with rectilinear cross sections that generally give rise to polarization dependence, the cylindrical fiber waveguides have the advantage of a circular, polarization-independent cross section. Furthermore, the fiber pores, and thus the wires deposited in them, are exceptionally smooth[8] with extremely uniform diameter over their entire length. The high-pressure chemical vapor deposition (HPCVD) technique is simple, low cost, and flexible so that it can be modified to fill a range of capillaries with differing core dimensions, while high production rates can be obtained by parallel fabrication of multiple fibers in a single deposition. It can also be extended to fill the large number of micro- and nanoscale pores in microstructured optical fibers (MOFs), providing additional geometrical design flexibility to enhance the potential application base of the fiber devices.[9] Semiconductor fibers fabricated via HPCVD in silica pores also retain the inherent characteristics of silica fibers, including their robustness and compatibility with existing optical fiber infrastructure, thus presenting considerable advantages over fibers based on multicomponent soft glasses.

[1]  V. Gopalan,et al.  High‐Pressure Chemical Deposition for Void‐Free Filling of Extreme Aspect Ratio Templates , 2010, Advanced materials.

[2]  A. Rao,et al.  Binary III-V semiconductor core optical fiber. , 2010, Optics express.

[3]  Igor Moskalev,et al.  Progress in Cr2+ and Fe2+ doped mid‐IR laser materials , 2010 .

[4]  Marco N. Petrovich,et al.  Large mode area silicon microstructured fiber with robust dual mode guidance. , 2009, Optics express.

[5]  M. Schmidt,et al.  Optical properties of photonic crystal fiber with integral micron-sized Ge wire. , 2008, Optics express.

[6]  Pier J. A. Sazio,et al.  Single‐Crystal Semiconductor Wires Integrated into Microstructured Optical Fibers , 2008 .

[7]  G. Rusu,et al.  Structural characterization and optical properties of ZnSe thin films , 2007 .

[8]  J. Knight,et al.  Photonic crystal fibers and fiber lasers (Invited) , 2007 .

[9]  O. Shapira,et al.  Towards multimaterial multifunctional fibres that see, hear, sense and communicate. , 2007, Nature materials.

[10]  J. Limpert,et al.  High-power ultrafast fiber laser systems , 2006, IEEE Journal of Selected Topics in Quantum Electronics.

[11]  Feng Zhang,et al.  Microstructured Optical Fibers as High-Pressure Microfluidic Reactors , 2006, Science.

[12]  P. Roberts,et al.  Loss in solid-core photonic crystal fibers due to interface roughness scattering. , 2005, Optics express.

[13]  P. Roberts,et al.  Ultimate low loss of hollow-core photonic crystal fibres. , 2005, Optics express.

[14]  Ayman F. Abouraddy,et al.  Metal–insulator–semiconductor optoelectronic fibres , 2004, Nature.

[15]  Irina T. Sorokina,et al.  Cr2+-doped II–VI materials for lasers and nonlinear optics , 2004 .

[16]  I. Salaoru,et al.  On the electronic transport properties of polycrystalline ZnSe films , 2003 .

[17]  E. M. Gavrushchuk Polycrystalline Zinc Selenide for IR Optical Applications , 2003 .

[18]  K. Vodopyanov,et al.  Solid-state mid-infrared laser sources , 2003 .

[19]  Robert S. Windeler,et al.  Integrated all-fiber variable attenuator based on hybrid microstructure fiber , 2001 .

[20]  W.A. Gambling,et al.  The rise and rise of optical fibers , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[21]  Tapas Ganguli,et al.  Raman and photoluminescence investigations of disorder in ZnSe films deposited on n -GaAs , 1999 .

[22]  Wolfgang Werner Langbein,et al.  Dispersion of the second-order nonlinear susceptibility in ZnTe, ZnSe, and ZnS , 1998 .

[23]  C. Thiandoume,et al.  Modeling and Process Optimization of ZnSe and ZnS Epitaxial Growth in a Vertical Metallorganic Vapor‐Phase Epitaxy Reactor , 1998 .

[24]  François Ladouceur,et al.  Roughness, inhomogeneity, and integrated optics , 1997 .

[25]  K. Yoshino,et al.  Temperature dependence of luminescence in ZnSe , 1995 .

[26]  M. Heuken,et al.  Photoluminescence spectroscopy as a tool to assess extrinsic impurities and quality of ZnSe and ZnSxSeI − x grown by MOVPE , 1994 .

[27]  J. M. Gaines,et al.  Correlation between radiative transitions and structural defects in zinc selenide epitaxial layers , 1990 .

[28]  M. Ogura,et al.  High quality ZnSe films grown by low pressure metalorganic vapor phase epitaxy using methylalkyls , 1987 .

[29]  J. E. Potts,et al.  Effects of beam pressure ratios on film quality in MBE growth of ZnSe , 1987 .

[30]  R. Bhargava The role of impurities in refined ZnSe and other II VI semiconductors , 1982 .