An example of chemistry–morphology interaction: making up for the geometric and energetic heterogeneities of the (1 0 0) surface of single crystalline silicon by high-temperature treatments in H2

[1]  C. Galati,et al.  Si 2p XPS spectrum of the hydrogen‐terminated (100) surface of device‐quality silicon , 2003 .

[2]  Hiroshi Iwasaki,et al.  Investigation of Shape Transformation of Silicon Trenches during Hydrogen Annealing , 2003 .

[3]  I. Fragalà,et al.  The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. III. Initial conditions , 2003 .

[4]  John A. Hunt,et al.  Surface chemical derivatization of plasma‐treated PET and PTFE , 2002 .

[5]  C. Galati,et al.  Accounting for anomalous oxidation states of silicon at the Si/SiO2 interface , 2002 .

[6]  Y. Mori,et al.  Atomic image of hydrogen-terminated Si(001) surfaces after wet cleaning and its first-principles study , 2002 .

[7]  V. Palermo,et al.  Morphological changes of the Si [100] surface after treatment with concentrated and diluted HF , 2001 .

[8]  G. Ottaviani,et al.  Helium/deuterium coimplanted silicon: A thermal desorption spectrometry investigation , 2001 .

[9]  J. Boland,et al.  Dimer preparation that mimics the transition state for the adsorption of H2 on the Si(100)-2 x 1 surface. , 2000, Science.

[10]  White,et al.  Direct absorption of gas-phase atomic hydrogen by si(100): A narrow temperature window , 2000, Physical review letters.

[11]  F. Zimmermann,et al.  Interaction of H2 with Si(001)-(2 x 1): solution of the barrier puzzle. , 2000, Physical review letters.

[12]  H. Zandvliet Energetics of Si(001) , 2000 .

[13]  Y. Mori,et al.  Atomically resolved scanning tunneling microscopy of hydrogen-terminated Si(001) surfaces after HF cleaning , 2000 .

[14]  J. Schaefer,et al.  Ultimate resolution electron energy loss spectroscopy at H/Si(100) surfaces , 1998 .

[15]  M. Niwano,et al.  Hydrogen adsorption and desorption processes on Si(100) , 1998 .

[16]  A. Agarwal,et al.  On the mechanism of the hydrogen-induced exfoliation of silicon , 1997 .

[17]  T. Yamazaki,et al.  Silicon (001) surface after annealing in hydrogen ambient , 1996 .

[18]  L. Meda,et al.  Gas-phase room-temperature oxidation of (100) silicon , 1996 .

[19]  Y. Morita,et al.  Ideal hydrogen termination of Si(001) surface by wet‐chemical preparation , 1995 .

[20]  L. Meda,et al.  Chemistry at silicon crystalline surfaces , 1995 .

[21]  J. Yates,et al.  Surface Chemistry of Silicon. , 1995 .

[22]  Kelly,et al.  Theoretical study of the Si(100) surface reconstruction. , 1995, Physical review. B, Condensed matter.

[23]  Van de Walle Cg Energies of various configurations of hydrogen in silicon. , 1994 .

[24]  Zheng-Hong Lu,et al.  SiO2/Si(100) interface studied by Al Kα x‐ray and synchrotron radiation photoelectron spectroscopy , 1993 .

[25]  T. Ohmi,et al.  Growth of native oxide on a silicon surface , 1990 .

[26]  F. J. Himpsel,et al.  Microscopic structure of the SiO 2 /Si interface , 1988 .

[27]  E. Sirtl,et al.  Modern silicon technology , 1975 .