An example of chemistry–morphology interaction: making up for the geometric and energetic heterogeneities of the (1 0 0) surface of single crystalline silicon by high-temperature treatments in H2
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V. Palermo | C. Galati | L. Renna | G. Cerofolini | S. Reina | D. Jones
[1] C. Galati,et al. Si 2p XPS spectrum of the hydrogen‐terminated (100) surface of device‐quality silicon , 2003 .
[2] Hiroshi Iwasaki,et al. Investigation of Shape Transformation of Silicon Trenches during Hydrogen Annealing , 2003 .
[3] I. Fragalà,et al. The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. III. Initial conditions , 2003 .
[4] John A. Hunt,et al. Surface chemical derivatization of plasma‐treated PET and PTFE , 2002 .
[5] C. Galati,et al. Accounting for anomalous oxidation states of silicon at the Si/SiO2 interface , 2002 .
[6] Y. Mori,et al. Atomic image of hydrogen-terminated Si(001) surfaces after wet cleaning and its first-principles study , 2002 .
[7] V. Palermo,et al. Morphological changes of the Si [100] surface after treatment with concentrated and diluted HF , 2001 .
[8] G. Ottaviani,et al. Helium/deuterium coimplanted silicon: A thermal desorption spectrometry investigation , 2001 .
[9] J. Boland,et al. Dimer preparation that mimics the transition state for the adsorption of H2 on the Si(100)-2 x 1 surface. , 2000, Science.
[10] White,et al. Direct absorption of gas-phase atomic hydrogen by si(100): A narrow temperature window , 2000, Physical review letters.
[11] F. Zimmermann,et al. Interaction of H2 with Si(001)-(2 x 1): solution of the barrier puzzle. , 2000, Physical review letters.
[12] H. Zandvliet. Energetics of Si(001) , 2000 .
[13] Y. Mori,et al. Atomically resolved scanning tunneling microscopy of hydrogen-terminated Si(001) surfaces after HF cleaning , 2000 .
[14] J. Schaefer,et al. Ultimate resolution electron energy loss spectroscopy at H/Si(100) surfaces , 1998 .
[15] M. Niwano,et al. Hydrogen adsorption and desorption processes on Si(100) , 1998 .
[16] A. Agarwal,et al. On the mechanism of the hydrogen-induced exfoliation of silicon , 1997 .
[17] T. Yamazaki,et al. Silicon (001) surface after annealing in hydrogen ambient , 1996 .
[18] L. Meda,et al. Gas-phase room-temperature oxidation of (100) silicon , 1996 .
[19] Y. Morita,et al. Ideal hydrogen termination of Si(001) surface by wet‐chemical preparation , 1995 .
[20] L. Meda,et al. Chemistry at silicon crystalline surfaces , 1995 .
[21] J. Yates,et al. Surface Chemistry of Silicon. , 1995 .
[22] Kelly,et al. Theoretical study of the Si(100) surface reconstruction. , 1995, Physical review. B, Condensed matter.
[23] Van de Walle Cg. Energies of various configurations of hydrogen in silicon. , 1994 .
[24] Zheng-Hong Lu,et al. SiO2/Si(100) interface studied by Al Kα x‐ray and synchrotron radiation photoelectron spectroscopy , 1993 .
[25] T. Ohmi,et al. Growth of native oxide on a silicon surface , 1990 .
[26] F. J. Himpsel,et al. Microscopic structure of the SiO 2 /Si interface , 1988 .
[27] E. Sirtl,et al. Modern silicon technology , 1975 .