Electric field tailoring in MBE-grown vertical sub-100 nm MOSFETs
暂无分享,去创建一个
Ignaz Eisele | C Fink | V. Ramgopal Rao | W. Hansch | V. Rao | W. Hansch | C. Fink | I. Eisele | F Kaesen | F. Kaesen
[1] Norman G. Einspruch,et al. Vlsi Electronics: Microstructure Science , 1982 .
[2] E. Constant,et al. Determination of transient regime of hot carriers in semiconductors, using the relaxation time approximations , 1981 .
[3] R.H. Dennard,et al. Design and experimental technology for 0.1-µm gate-length low-temperature operation FET's , 1987, IEEE Electron Device Letters.
[4] Universal behaviour of the electronic transport , 1992 .
[5] H. Gossner,et al. Vertical Si-Metal-Oxide-Semiconductor Field Effect Transistors with Channel Lengths of 50 nm by Molecular Beam Epitaxy. , 1994 .
[6] D. Kern,et al. High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level , 1988, IEEE Electron Device Letters.
[7] Michael S. Shur,et al. Influence of nonuniform field distribution on frequency limits of GaAs field-effect transistors , 1976 .
[8] H.I. Smith,et al. Observation of electron velocity overshoot in sub-100-nm-channel MOSFET's in Silicon , 1985, IEEE Electron Device Letters.
[9] L. Risch,et al. Vertical MOS Transistors with 70nm Channel Length , 1995, ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference.
[10] T. Kaizuka,et al. Conformal Chemical Vapor Deposition TiN(111) Film Formation as an Underlayer of Al for Highly Reliable Interconnects , 1994 .
[11] The Relation Between Information, Time and Space Inferred from Universal Phenomena in Solid-State Physics , 1994 .
[12] G. Baccarani,et al. An investigation of steady-state velocity overshoot in silicon , 1985 .
[13] Eugene P. Wigner,et al. Effects of the Electron Interaction on the Energy Levels of Electrons in Metals , 1938 .
[14] S. Chou,et al. Relationship between measured and intrinsic transconductances of FET's , 1987, IEEE Transactions on Electron Devices.
[15] W. Hansch,et al. Silicon nanostructure devices , 1995 .