论文信息 - A nonlinear HEMT model for the design of frequency doubler and mixer circuits

A nonlinear HEMT model for the design of frequency doubler and mixer circuits

This paper presents a nonlinear transistor model for millimeter wave HEMT devices. The model has been implemented in both parameter extraction and commercial circuit simulation software. It takes into account the nonlinearities of the gate-source and the gate-drain capacitances, and it allows accurately modeling of the transconductance as a function of the gate-source voltage. The model has been validated using a large-signal measurement system. Several nonlinear circuits comprising frequency doublers, oscillators and mixers have been designed and the measured results are in good agreement to the nonlinear simulation.

Michael Schlechtweg | D. Hollmann | G. Baumann | R. Heilig

[1] G. Dambrine,et al. A new method for determining the FET small-signal equivalent circuit , 1988 .

[2] Guido Baumann,et al. A monolithic 1-55 GHz HEMT distributed amplifier in coplanar waveguide technology , 1993, 1993 23rd European Microwave Conference.

[3] D. Hollmann,et al. A 29 GHz DRO in coplanar waveguide configuration with an AlGaAs HEMT , 1994, Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits.

[4] R. Anholt,et al. Equivalent-circuit parameter extraction for cold GaAs MESFET's , 1991 .

[5] Manfred Berroth,et al. High-frequency equivalent circuit of GaAs FETs for large-signal applications , 1991 .

[6] D. Hollmann,et al. A monolithic broadband 10-50 GHz distributed HEMT mixer including active LO-RF combiner , 1994, Proceedings of 1994 IEEE GaAs IC Symposium.