Research on power model of multi-mode FinFET standard cell

FinFET, because of good device characteristics, manufacture process compatibility and the diversity of the circuit structure, is considered the best candidate for the conventional bulk-MOSFETs in sub-22nm technology nodes. In this paper, power model of multi-mode FinFET standard cells are discussed and the influence that back-gate voltage of FinFETs on leakage power and internal power of standard cell circuits is analyzed. The research results will lay foundation for library-based power analysis and modeling of FinFET circuits. Besides, some consideration is also crucial for low-power FinFET circuit designs.