Current-induced magnetization switching at low current densities in current-perpendicular-to-plane structural Fe3Si/FeSi2 artificial lattices

Current-perpendicular-to-plane (CPP) junctions of Fe3Si/FeSi2 were fabricated from Fe3Si/FeSi2 artificial lattice films, which were prepared by facing-target direct-current sputtering, by employing a focused ion beam (FIB) technique. CPP structurization was confirmed by scanning electron microscopy. The CPP junctions, in which antiferromagnetic interlayer coupling is induced between the Fe3Si layers, exhibited a clear hysteresis loop in the electrical resistance for current injection, which is probably due to current-induced magnetization switching. The critical current density for it is approximately 3.3 × 101 A/cm2, which is at least four orders smaller than the values that have ever been reported.

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