Investigation of channel hot electron injection by localized charge-trapping nonvolatile memory devices

A novel measurement method to extract the spatial distribution of channel hot electron injection is described. The method is based on characterization of localized trapped-charge in the nitride read-only memory (NROM) device. The charge distribution is determined by iteratively fitting simulated subthreshold and gate induced drain leakage (GIDL) currents to measurements. It is shown that the subthreshold and the GIDL measurements are sensitive to charge trapped over the n+ junction edge. Their characteristics are determined by the trapped charge width, density and location and the associated fringing field. Extremely high sensitivity of the GIDL measurement to localized charge over the n+ junction is demonstrated. The extracted charge distribution width is shown to be /spl sim/40 nm, located over the junction edge.

[1]  Yu-Lin Chu,et al.  A new observation of band-to-band tunneling induced hot-carrier stress using charge-pumping technique [MOSFETs] , 2000 .

[2]  B. Eitan,et al.  Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells , 2002 .

[3]  Yu-Lin Chu,et al.  A new charge-pumping technique for profiling the interface-states and oxide-trapped charges in MOSFETs , 2000 .

[4]  J. Jomaah,et al.  Band-to-band tunnelling model of gate induced drain leakage current in silicon MOS transistors , 1996 .

[5]  T. Chan,et al.  A true single-transistor oxide-nitride-oxide EEPROM device , 1987, IEEE Electron Device Letters.

[6]  B. Eitan,et al.  Electrons retention model for localized charge in oxide-nitride-oxide (ONO) dielectric , 2002, IEEE Electron Device Letters.

[7]  B. Eitan,et al.  Characterization of channel hot electron injection by the subthreshold slope of NROM/sup TM/ device , 2001, IEEE Electron Device Letters.

[8]  T. Ma,et al.  Improved charge-pumping method for lateral profiling of interface traps and oxide charge in MOSFET devices , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[9]  Tahui Wang,et al.  Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current technique , 1998 .

[10]  E. Kane.  Zener tunneling in semiconductors , 1960 .

[11]  M. Shur,et al.  Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFETs , 1993 .

[12]  T. Ma,et al.  Direct lateral profiling of hot-carrier-induced oxide charge and interface traps in thin gate MOSFET's , 1998 .

[13]  E. Suzuki,et al.  On oxide—nitride interface traps by thermal oxidation of thin nitride in metal-oxide-nitride-oxide-semiconductor memory structures , 1986, IEEE Transactions on Electron Devices.

[14]  Ching-Yuan Wu,et al.  A new quasi-2-D model for hot-carrier band-to-band tunneling current , 1999 .

[15]  Trade-offs between tunneling and hot-carrier injection in short channel floating gate MOSFETs , 1997 .

[16]  B. Eitan,et al.  Subthreshold slope degradation model for localized-charge-trapping based non-volatile memory devices , 2003 .

[17]  M. Tsuchiaki,et al.  A new charge pumping method for determining the spatial distribution of hot-carrier-induced fixed charge in p-MOSFETs , 1993 .

[18]  B. Eitan,et al.  NROM: A novel localized trapping, 2-bit nonvolatile memory cell , 2000, IEEE Electron Device Letters.

[19]  Chimoon Huang,et al.  Modeling hot-electron gate current in Si MOSFET's using a coupled drift-diffusion and Monte Carlo method , 1992 .

[20]  E. Suzuki,et al.  Traps created at the interface between the nitride and the oxide on the nitride by thermal oxidation , 1983 .

[21]  Guido Groeseneken,et al.  Basics and applications of charge pumping in submicron MOSFET's , 1997, 1997 21st International Conference on Microelectronics. Proceedings.

[22]  Guido Groeseneken,et al.  Basics and applications of charge pumping in submicron MOSFETs© 1997 IEEE. Reprinted, with permission, from Proc. 1997 21st International Conference on Microelectronics, Nis, Yugoslavia, 14–17 September 1997, Vol. 2, pp. 581–589. , 1998 .

[23]  M. Rosmeulen,et al.  Spatial characterization of the local charge-distribution in silicon-rich-oxide channel-hot-electron injection based non-volatile memory cells using the charge pumping technique , 2003 .

[24]  Chi Chang,et al.  Corner-field induced drain leakage in thin oxide MOSFETs , 1987, 1987 International Electron Devices Meeting.

[25]  Plasma-induced charging in two bit per cell SONOS memories , 2003, 2003 8th International Symposium Plasma- and Process-Induced Damage..

[26]  Y. Igura,et al.  New device degradation due to 'cold' carriers created by band-to-band tunneling , 1989, IEEE Electron Device Letters.