论文信息 - Photoabsorption in amorphous chalcogenides at 10.6 μm using guided wave techniques - 字舞流文

Photoabsorption in amorphous chalcogenides at 10.6 μm using guided wave techniques

K. Weiser | E. Zeldov

[1] Keiji Tanaka,et al. Photo‐optical switching devices by amorphous As2S3 waveguides , 1981 .

[2] D. Polla,et al. Lifetime measurement in Hg0.7Cd0.3Te by population modulation , 1981 .

[3] J. Tauc,et al. Optical studies of excess carrier recombination in a-Si: H: evidence for dispersive diffusion , 1980 .

[4] M. Olivier,et al. Photoinduced optical absorption versus photoconductivity in hydrogenated amorphous silicon , 1980 .

[5] M. Kastner,et al. Time-resolved measurements of photo-induced optical absorption and photocurrent in a-As2Se3 , 1980 .

[6] J. Tauc,et al. Picosecond Relaxation of Optically Induced Absorption in Amorphous Semiconductors , 1979 .

[7] J. Tauc,et al. Photoinduced Optical Absorption in AmorphousSixGe1−x:H , 1979 .

[8] M. Kastner,et al. Time-Resolved Optical Absorption and Mobility of Localized Charge Carriers in a - As 2 Se 3 , 1979 .

[9] R. K. Quinn,et al. DC electronic transport in binary arsenic chalcogenide glasses , 1975 .

[10] T. Moustakas,et al. Transport and recombination properties of amorphous arsenic telluride , 1975 .

[11] P. Tien. Light waves in thin films and integrated optics. , 1971, Applied optics.

[12] K. Weiser,et al. dc Conductivity, Optical Absorption, and Photoconductivity of Amorphous Arsenic Telluride Films , 1970 .