论文信息 - QUANTUM TRANSPORT MODELING OF RESONANT-TUNNELING DEVICES

QUANTUM TRANSPORT MODELING OF RESONANT-TUNNELING DEVICES

Abstract A form of quantum transport theory has been developed to model the resonant-tunneling diode and similar devices in which quantum interference effects play a significant role. The internal state of the devices is represented by the Wigner distribution function, with boundary conditions which model the effects of the electrical contacts to the device. Inelastic scattering processes are approximated by a classical Boltzmann collision operator, and the effects of different scattering processes on the device characteristics are evaluated numerically.

William R. Frensley | W. Frensley

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