Free carrier absorption in n-type CdTe

Abstract Experimental results for free carrier absorption at room temperature in lightly doped samples of n -type CdTe, including the λ 3 dependence of the absorption coefficient on the photon wavelength, can be satisfactorily accounted for in terms of polar optical mode scattering with a very small contribution by impurity scattering. Use is made of the quantum theory of free carrier absorption initially developed for direct gap III–V semiconducting compounds, which utilizes the Kane band structure and includes nonparabolicity, arbitrary spin-orbit splitting values, overlap wave function factors, and intermediate states in other bands.

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