Electrical characterization of blue AlGaN/InGaN/GaN LEDs

We report results of electrical characterization studies of Nichia NLPB500 blue LEDs. The devices incorporate an AlGaN:Mg/InGaN:Si:Zn/GaN:Si double heterostructure and were subject to high-current stress for short periods of time. The electrical characterization included IV, CV, DLTS and admittance spectroscopy. DC IV measurements showed large reverse leakage currents and diode ideality factors around n=5 at room temperature.