An enhanced quantum well infrared photodetector (EQWIP) with lower dark current and improved performance relative to a conventional QWIP is described. Dark current reduction and external quantum efficiency improvements are achieved by novel structural enhancements that involve patterning the GaAs/AlGaAs multiple quantum well into a diffraction grating and reducing the number of wells. A 64×64 long wave infrared EQWIP array with 60 μm pixel pitch and peak D*∼8×1010 cm Hz1/2/W was demonstrated at 77 K. The low bias current permits hybridization to conventional readout circuits. Test results for pixel pitches down to 30 μm show that high EQWIP performance is achievable in the small pixels required for large focal plane array formats.