Manganese incorporation behavior in molecular beam epitaxial gallium arsenide

A secondary ion mass spectrometric study of the substrate temperature and As4/Ga flux‐ratio dependence of the chemical incorporation behavior of manganese in molecular beam epitaxial GaAs is presented. At molecular beam epitaxial growth temperatures, manganese competitively surface segregates, desorbs, and complexes with As at the surface. No significant diffusion was observed. The incorporation model of Wood et al. qualitatively explains the observed behavior.

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