Characterization of ZnO films grown on different substrates by L-MBE method

ZnO films were fabricated using Laser molecular beam epitaxy method on different substrates including Si(001), C-plane and R-plane Al2O3. The crystallinity and orientation of the films, as well as the epitaxial relationship between ZnO films and the substrate were studied using X-ray diffraction (XRD) technique. For the films grown on C-plane Al2O3 and Si(001) substrates, Highly c-axis oriented ZnO films were obtained. The surface morphology and roughness of ZnO films were determined by atomic force microscopy (AFM) and Reflection High Energy Electron diffraction (RHEED).