The fabrication of carbon nanotube field-effect transistors with semiconductors as the source and drain contact materials

Sb(2)Te(3) and Bi(2)Te(2)Se semiconductor materials were used as the source and drain contact materials in the fabrication of carbon nanotube field-effect transistors (CNTFETs). Ultra-purified single-walled carbon nanotubes (SWCNTs) were ultrasonically dispersed in N-methyl pyrrolidone solvent. Dielectrophoresis was used to deposit and align SWCNTs for fabrication of CNTFETs. The Sb(2)Te(3)- and Bi(2)Te(2)Se-based CNTFETs demonstrate p-type metal-oxide-silicon-like I-V curves with high on/off drain-source current ratio at large drain-source voltages and good saturation of drain-source current with increasing drain-source voltage. The fabrication process developed is novel and has general meaning, and could be used for the fabrication of SWCNT-based integrated devices and systems with semiconductor contact materials.

[1]  Leon Balents,et al.  Luttinger-liquid behaviour in carbon nanotubes , 1998, Nature.

[2]  Xinqi Chen,et al.  Aligning single-wall carbon nanotubes with an alternating-current electric field , 2001 .

[3]  P. Ajayan,et al.  Reliability and current carrying capacity of carbon nanotubes , 2001 .

[4]  E. Lankester,et al.  Height and Weight , 1870, Nature.

[5]  Kong,et al.  Nanotube molecular wires as chemical sensors , 2000, Science.

[6]  J. Smits,et al.  Controlled Deposition and Applied Field Alignment of Single Walled Carbon Nanotubes for CNT Device Fabrication. , 2002 .

[7]  T. N. Todorov,et al.  Quantum electronics: Nanotubes go ballistic , 2001, Nature.

[8]  Benedict,et al.  Static polarizabilities of single-wall carbon nanotubes. , 1995, Physical review. B, Condensed matter.

[9]  Fang Chen,et al.  Controllable interconnection of single-walled carbon nanotubes under ac electric field. , 2005, The journal of physical chemistry. B.

[10]  A nanotube molecular tool , 1996, Nature.

[11]  Jing Guo,et al.  Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics , 2004 .

[12]  Larry A. Nagahara,et al.  Directed placement of suspended carbon nanotubes for nanometer-scale assembly , 2002 .

[13]  Kenneth A. Smith,et al.  Controlled deposition of individual single-walled carbon nanotubes on chemically functionalized templates , 1999 .

[14]  H. Dai,et al.  Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method , 2004 .

[15]  S. Tans,et al.  Room-temperature transistor based on a single carbon nanotube , 1998, Nature.

[16]  H. Dai,et al.  Synthesis, integration, and electrical properties of individual single-walled carbon nanotubes , 1999 .

[17]  Sub-20 nm short channel carbon nanotube transistors. , 2004, Nano letters.

[18]  S. Barman,et al.  Self-Sorted, Aligned Nanotube Networks for Thin-Film Transistors , 2008, Science.

[19]  Eric S. Snow,et al.  Simple Route to Large-Scale Ordered Arrays of Liquid-Deposited Carbon Nanotubes , 2004 .

[20]  H. B. Weber,et al.  Patterning and Visualizing Self-Assembled Monolayers with Low-Energy Electrons , 2002 .

[21]  Heiko B. Weber,et al.  Simultaneous Deposition of Metallic Bundles of Single-walled Carbon Nanotubes Using Ac-dielectrophoresis , 2003 .

[22]  Herbert Shea,et al.  Single- and multi-wall carbon nanotube field-effect transistors , 1998 .

[23]  Charge transfer induced polarity switching in carbon nanotube transistors. , 2005, Nano letters.

[24]  Seiji Akita,et al.  RAPID COMMUNICATION: Orientation and purification of carbon nanotubes using ac electrophoresis , 1998 .

[25]  Charles M. Lieber,et al.  Carbon nanotube-based nonvolatile random access memory for molecular computing , 2000, Science.

[26]  E. Campbell,et al.  Alternating current dielectrophoresis of carbon nanotubes , 2005 .

[27]  Meijie Tang,et al.  Reversible electromechanical characteristics of carbon nanotubes underlocal-probe manipulation , 2000, Nature.

[28]  Erik H. Anderson,et al.  Chemical profiling of single nanotubes: Intramolecular p–n–p junctions and on-tube single-electron transistors , 2002 .

[29]  Richard Martel,et al.  Fabrication and electrical characterization of top gate single-wall carbon nanotube field-effect transistors , 2002 .