Low frequency noise spectroscopy in InAs/GaAs resonant tunneling quantum dot infrared photodetectors

We have studied the temperature dependence of low-frequency noise in InAs-GaAs resonant tunneling quantum dot infrared photodetectors (T-QDIPs). The noise in these devices has been investigated in the temperature range of 78-300K. The noise spectrum showed a weak Lorentzian component superimposed upon the 1/fγ spectrum. The change in the cut-off frequency of the Lorentzian was analyzed as a function of temperature. The activation energy of the trap associated with this Lorentzian was obtained as 0.155eV, which is in good agreement with the energy of the lowest energy state in the quantum dot.

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