Effect of pre-annealing on the phase formation and efficiency of CZTS solar cell prepared by sulfurization of Zn/(Cu,Sn) precursor with H2S gas
暂无分享,去创建一个
Heon-Jin Choi | Jung Hun Lee | J. Jeong | W. Kim | J. Park
[1] J. H. Kim,et al. A 5.1% efficient kesterite Cu2ZnSnS4 (CZTS) thin film solar cell prepared using modified sulfurization process , 2015 .
[2] Heon-Jin Choi,et al. Effect of precursor stacking structure on the phase formation and efficiency of Cu2ZnSnS4 solar cell prepared by sulfurization of Cu-Zn-Sn metal precursors with H2S gas , 2015 .
[3] C. Westgate,et al. Effects of sulfurization temperature on CZTS thin film solar cell performances , 2013 .
[4] Debora Keller,et al. Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells. , 2013, Nature materials.
[5] M. Placidi,et al. On the formation mechanisms of Zn-rich Cu2ZnSnS4 films prepared by sulfurization of metallic stacks , 2013 .
[6] Jeong Yong Lee,et al. Crystallization behaviour of co-sputtered Cu2ZnSnS4 precursor prepared by sequential sulfurization processes , 2013, Nanotechnology.
[7] Supratik Guha,et al. Thin film solar cell with 8.4% power conversion efficiency using an earth‐abundant Cu2ZnSnS4 absorber , 2013 .
[8] C. H. Bhosale,et al. Studies of compositional dependent CZTS thin film solar cells by pulsed laser deposition technique: An attempt to improve the efficiency , 2012 .
[9] Hyesun Yoo,et al. Sulfurization temperature effects on the growth of Cu2ZnSnS4 thin film , 2012 .
[10] L. Romankiw,et al. A High Efficiency Electrodeposited Cu2ZnSnS4 Solar Cell , 2012 .
[11] Jooho Moon,et al. A non-toxic, solution-processed, earth abundant absorbing layer for thin-film solar cells , 2012 .
[12] J. Yun,et al. Studies on Cu2ZnSnS4 (CZTS) absorber layer using different stacking orders in precursor thin films , 2011 .
[13] B. Ahn,et al. Fabrication of Cu2ZnSnS4 films by sulfurization of Cu/ZnSn/Cu precursor layers in sulfur atmosphere for solar cells , 2011 .
[14] D. Hariskos,et al. New world record efficiency for Cu(In,Ga)Se2 thin‐film solar cells beyond 20% , 2011 .
[15] T. Seong,et al. High-temperature stability of molybdenum (Mo) back contacts for CIGS solar cells: a route towards more robust back contacts , 2011 .
[16] Kunihiko Tanaka,et al. Influence of H2S concentration on the properties of Cu2ZnSnS4 thin films and solar cells prepared by sol–gel sulfurization , 2011 .
[17] J. Scragg. Copper Zinc Tin Sulfide Thin Films for Photovoltaics: Synthesis and Characterisation by Electrochemical Methods , 2011 .
[18] Supratik Guha,et al. The path towards a high-performance solution-processed kesterite solar cell ☆ , 2011 .
[19] M. Yamazaki,et al. Preparation of Cu2ZnSnS4 thin films by sulfurization of stacked metallic layers , 2008 .
[20] Tadashi Ito,et al. Enhanced Conversion Efficiencies of Cu2ZnSnS4-Based Thin Film Solar Cells by Using Preferential Etching Technique , 2008 .
[21] B. Rezig,et al. Fabrication and characterization of Cu2ZnSnS4 thin films deposited by spray pyrolysis technique , 2007 .
[22] I. Parkin,et al. The first single source deposition of tin sulfide coatings on glass: aerosol-assisted chemical vapour deposition using [Sn(SCH2CH2S)(2)] , 2001 .
[23] Kentaro Ito,et al. Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin Films , 1988 .