“Microstructured Nanostructures” – Nanostructuring by Means of Conventional Photolithography and Layer-expansion Technique

A new and simple method for nanostructuring using conventional photolithography and layer expansion or pattern-size reduction technique is presented, which can further be applied for the fabrication of different nanostructures and nano-devices. The method is based on the conversion of a photolithographically patterned metal layer to a metal-oxide mask with improved pattern-size resolution using thermal oxidation. With this technique, the pattern size can be scaled down to several nanometer dimensions. The proposed method is experimentally demonstrated by preparing nanostructures with different configurations and layouts, like circles, rectangles, trapezoids, “fluidic-channel”-, “cantilever”- and meander-type structures.

[1]  Sung Wook Park,et al.  Effects of oxidation conditions on the properties of tantalum oxide films on silicon substrates , 1992 .

[2]  Hideki Matsumura,et al.  A metal/insulator tunnel transistor with 16 nm channel length , 1999 .

[3]  Michael J. Schöning,et al.  CIP (cleaning-in-place) suitable “non-glass” pH sensor based on a Ta2O5-gate EIS structure , 2005 .

[4]  Hirokazu Hara,et al.  Dynamic response of a Ta2O5-gate pH-sensitive field-effect transistor , 1996 .

[5]  Kenji Yamazaki,et al.  Fabrication of Si single-electron transistors with precise dimensions by electron-beam nanolithography , 2003 .

[6]  J. T. Horstmann,et al.  New fabrication technique for nano-MOS transistors with W=25 nm and L=25 nm using only conventional optical lithography , 2002 .

[7]  Róbert Juhász,et al.  Silicon nanofabrication by electron beam lithography and laser-assisted electrochemical size-reduction , 2002 .

[8]  Chinchun Meng,et al.  Formation of submicron T-gate by rapid thermally reflowed resist with metal transfer layer , 2001 .

[9]  Hideki Matsumura,et al.  Nanoscale metal transistor control of Fowler–Nordheim tunneling currents through 16 nm insulating channel , 1999 .

[10]  J. Autran,et al.  Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications , 1998 .

[11]  Elena Atanassova,et al.  Electrical properties of thin Ta2O5 films obtained by thermal oxidation of Ta on Si , 1997 .

[12]  Michael J. Schöning,et al.  Detecting Both Physical and (Bio‐)Chemical Parameters by Means of ISFET Devices , 2004 .

[13]  Hendrik Emons,et al.  Application of ISFETs for pH measurement in rain droplets , 2001 .

[14]  Y Chen,et al.  Nanofabrication: Conventional and nonconventional methods , 2001, Electrophoresis.

[15]  Byung-Gook Park,et al.  Nanoscale Multi-Line Patterning Using Sidewall Structure , 2002 .

[16]  S. Hashioka,et al.  10 nm size fabrication of semiconductor substrates and metal thin lines by conventional photolithography , 2000, Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387).

[17]  H. S. Wolff,et al.  iRun: Horizontal and Vertical Shape of a Region-Based Graph Compression , 2022, Sensors.

[18]  Hideki Matsumura,et al.  Nanometer Pattern-Mask Fabricated by Conventional Photolithography , 1997 .

[19]  Michael J. Schöning,et al.  Towards self-aligned nanostructures by means of layer-expansion technique , 2005 .

[20]  S. Bouwstra,et al.  Tantalum oxide thin films as protective coatings for sensors , 1999, Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.99CH36291).

[21]  D. B. Robinson,et al.  Controlled fabrication of metallic electrodes with atomic separation , 1999 .

[22]  T. Mogi,et al.  The novel nano-fabrication technique with low edge roughness , 2002, 2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers..

[23]  Dieter P. Kern,et al.  Self-limiting and pattern dependent oxidation of silicon dots fabricated on silicon-on-insulator material , 2000 .

[24]  Egbert Oesterschulze,et al.  Lithography-free fabrication of sub-100 nm structures by self-aligned plasma etching of silicon dioxide layers and silicon , 2003 .

[25]  Chul-Hi Han,et al.  A Novel Sub-Micron Gap Fabrication Technology Using Chemical-Mechanical Polishing (CMP): Application to Lateral Field Emission Device (FED) , 2002 .

[26]  Byung-Ki Sohn,et al.  Effects of heat treatment on Ta2O5 sensing membrane for low drift and high sensitivity pH-ISFET , 1996 .

[27]  Jeffrey Bokor,et al.  Fabrication of Sub-10-nm Silicon Nanowire Arrays by Size Reduction Lithography , 2003 .