Lateral channel engineered hetero material insulated shallow extension gate stack (HMISEGAS) MOSFET structure: high performance RF solution for MOS technology

In this work, due to increasing interest in analog and RF applications of MOS technology, an extended study is performed using ATLAS-2D device simulation software to assess the RF performance of insulated shallow extension gate stack (ISEGAS) devices in comparison to conventional bulk devices. The paper analyzes the frequency dependence of gate transconductance and parasitic capacitances that affect various RF performance metrics. Improvement in the characteristics of ISE with hetero material gate (HMG) incorporation (HMISEGAS) is also studied. Thus, the ISE structure with the HMG architecture can revolutionize the wireless communication market on account of having enormous RF application potential and the ability to combat short channel effects—the daunting roadblock for miniaturization.

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