Use of surface grooves to control ordering in GaAsP

GaAs1−xPx with 0.4≤x≤0.85 forms the CuPt ordered structure during organometallic vapor phase epitaxy (OMVPE). Only the (111) and (111) variants are observed for growth on (001)‐oriented substrates. The mechanism by which ordering occurs is only now being discovered. Total energy calculations, including the effects of surface reconstruction, indicate that the phenomenon can be explained purely on the basis of energy considerations. Indirect evidence indicates that kinetic factors, including processes occurring at steps propagating across the surface in the two‐dimensional growth mode, control ordering. In this work, GaAs1−xPx layers have been grown by OMVPE on (001)‐oriented GaAs0.6P0.4‘‘substrates.’’ In order to examine the effects of surface kinetic factors, the substrates were first patterned with [110]‐oriented grooves 5 μm wide and a fraction of a micron deep. The groove is used to provide a source of steps moving in opposite directions from the two edges. Transmission electron diffraction reveals t...

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