DIFFUSIONAL NARROWING OF GE ON SI(100) COHERENT ISLAND QUANTUM DOT SIZE DISTRIBUTIONS
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[1] Lee,et al. Large-scale ab initio study of the binding and diffusion of a Ge adatom on the Si(100) surface. , 1994, Physical review. B, Condensed matter.
[2] S. Chaparro,et al. Morphological evolution during Ge/Si(100) heteroepitaxy , 1995 .
[3] Drucker. Coherent islands and microstructural evolution. , 1993, Physical review. B, Condensed matter.
[4] M. Lannoo,et al. Origin of self-assembled quantum dots in highly mismatched heteroepitaxy. , 1995, Physical review letters.
[5] Scaling of heteroepitaxial island sizes , 1994, cond-mat/9406066.
[6] Wang,et al. Stick-slip transition at polymer melt/solid interfaces. , 1995, Physical review letters.
[7] Leonard,et al. Critical layer thickness for self-assembled InAs islands on GaAs. , 1994, Physical review. B, Condensed matter.
[8] M. Lagally,et al. Anisotropy in surface migration of Si and Ge on Si(001) , 1991 .
[9] G. Medeiros-Ribeiro,et al. Three-Dimensional Carrier Confinement in Strain-Induced Self-Assembled Quantum Dots , 1996 .
[10] Evans,et al. Scaling analysis of diffusion-mediated island growth in surface adsorption processes. , 1992, Physical review. B, Condensed matter.
[11] Kerry J. Vahala,et al. Quantum box fabrication tolerance and size limits in semiconductors and their effect on optical gain , 1988 .