论文信息 - Resonant tunneling in Si/Si1−xGex double‐barrier structures

Resonant tunneling in Si/Si1−xGex double‐barrier structures

Resonant tunneling of holes has been observed for the first time in double‐barrier diodes with strained Si1−xGex quantum wells formed between unstrained Si barriers. Negative differential resistance with a peak‐to‐valley ratio in current of 1.8 at 77 K and of 2.2 at 4.2 K has been exhibited by a sample with a 3.3‐nm‐wide Si0.79Ge0.21 well between 6.0 nm Si barriers. The positions of the current peaks are in reasonable agreement with calculations of the positions of heavy‐hole levels in the quantum well.

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