Transient temperature evaluation during switching process in static induction transistor

In this paper a 2-D electrothermal analysis of a static induction transistor (SIT) is presented. Due to its excellent switching performances, the SIT has been used in a wide range of electronics applications in recent years. The main difficulties in applications of SIT are thermal problems caused by high voltage drop and power losses in the ON-state. In order to estimate the temperature rise inside the semiconductor structure and to examine the influence of gate driving on power losses, a 2-D electrical and thermal simulation of SIT working in a simple circuit has been performed.